skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Band gaps and spin-orbit splitting of ordered and disordered Al/sub x/Ga/sub 1-//sub x/As and GaAs/sub x/Sb/sub 1-//sub x/ alloys

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)

Spontaneous long-range ordering of the otherwise disordered isovalent semiconductor alloys A/sub x/B/sub 1-x/C has been recently observed in numerous III-V alloy systems exhibiting the CuAu-I, CuPt, and chalcopyrite structures. We present a theory for the ordering-induced changes in the Brillouin-zone-center electronic properties, with application to the Al/sub x/Ga/sub 1-//sub x/As and GaAs/sub x/Sb/sub 1-//sub x/ alloys. The dominant effect for these systems is shown to be level repulsion between different-symmetry states of the binary constituents which fold into equal-symmetry states in the ordered ternary structures. Strong variations in the band gaps, spin-orbit splittings, and charge densities among the three basic ordered structures reflect the different magnitudes of the symmetry-enforced coupling between the folded states. An extension of the model to the disordered alloys yields good agreement with the observed optical bowing parameters for the fundamental gaps; however, the positive (downward concave) bowing of the spin-orbit splitting observed in some common-cation semiconductor alloy remains an unexplained puzzle.

Research Organization:
Solar Energy Research Institute, Golden, Colorado 80401
OSTI ID:
6439577
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Vol. 39:5
Country of Publication:
United States
Language:
English