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Band-gap narrowing in ordered and disordered semiconductor alloys

Journal Article · · Applied Physics Letters; (USA)
OSTI ID:6925288
Either spontaneous or artificial ordering of semiconductor alloys into CuAu-like, chalcopyrite, or CuPt-like structures is predicted to be accompanied by a reduction in the direct band gaps relative to the average over the binaries. In this letter calculated results are presented for seven III-V and II-VI alloys. We identify the mechanism for this band-gap narrowing as band folding followed by repulsion between the folded states. The latter is coupled by the non-zinc-blende component of the superlattice potential. The same physical mechanism (but to a different extent) is responsible for gap bowing in {ital disordered} alloys.
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6925288
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:7; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English