Solution-Based Synthesis of Crystalline Silicon from Liquid Silane through Laser and Chemical Annealing

Iyer, Ganjigunte R.  S.; Hobbie, Erik K.; Guruvenket, Srinivasan; Hoey, Justin M.; Anderson, Kenneth J.; Lovaasen, John; Gette, Cody; Schulz, Douglas L.; Swenson, Orven F.; Elangovan, Arumugasamy; Boudjouk, P.

doi:10.1021/am300334p

Title: Solution-Based Synthesis of Crystalline Silicon from Liquid Silane through Laser and Chemical Annealing

Abstract

We report a solution process for the synthesis of crystalline silicon from the liquid silane precursor cyclohexasilane (Si₆H₁₂). Polysilane films were crystallized through thermal and laser annealing, with plasma hydrogenation at atmospheric pressure generating further structural changes in the films. The evolution from amorphous to microcrystalline is characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and impedance spectroscopy. A four-decade enhancement in the electrical conductivity is attributed to a disorder-order transition in a bonded Si network. Lastly, our results demonstrate a potentially attractive approach that employs a solution process coupled with ambient post-processing to produce crystalline silicon thin films.

Authors:: Iyer, Ganjigunte R. S.; Hobbie, Erik K.; Guruvenket, Srinivasan; Hoey, Justin M.; Anderson, Kenneth J.; Lovaasen, John; Gette, Cody; Schulz, Douglas L.; Swenson, Orven F.; Elangovan, Arumugasamy; Boudjouk, P.

Publication Date:: Wed May 23 00:00:00 EDT 2012

Research Org.:: North Dakota State Univ., Fargo, ND (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1046826

Report Number(s):: DOE/GO/88160-44
Journal ID: ISSN 1944-8244

Grant/Contract Number:: FG36-08GO88160

Resource Type:: Accepted Manuscript

Journal Name:: ACS Applied Materials and Interfaces

Additional Journal Information:: Journal Volume: 4; Journal Issue: 5; Journal ID: ISSN 1944-8244

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; silicon; liquid silane; laser crystallization; plasma annealing

Citation Formats


                    Iyer, Ganjigunte R.  S., Hobbie, Erik K., Guruvenket, Srinivasan, Hoey, Justin M., Anderson, Kenneth J., Lovaasen, John, Gette, Cody, Schulz, Douglas L., Swenson, Orven F., Elangovan, Arumugasamy, and Boudjouk, P. Solution-Based Synthesis of Crystalline Silicon from Liquid Silane through Laser and Chemical Annealing.  United States: N. p., 2012. 
Web.  doi:10.1021/am300334p.

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                    Iyer, Ganjigunte R.  S., Hobbie, Erik K., Guruvenket, Srinivasan, Hoey, Justin M., Anderson, Kenneth J., Lovaasen, John, Gette, Cody, Schulz, Douglas L., Swenson, Orven F., Elangovan, Arumugasamy, & Boudjouk, P. Solution-Based Synthesis of Crystalline Silicon from Liquid Silane through Laser and Chemical Annealing.  United States.  https://doi.org/10.1021/am300334p

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                    Iyer, Ganjigunte R.  S., Hobbie, Erik K., Guruvenket, Srinivasan, Hoey, Justin M., Anderson, Kenneth J., Lovaasen, John, Gette, Cody, Schulz, Douglas L., Swenson, Orven F., Elangovan, Arumugasamy, and Boudjouk, P. Wed .  
"Solution-Based Synthesis of Crystalline Silicon from Liquid Silane through Laser and Chemical Annealing".  United States.  https://doi.org/10.1021/am300334p.  https://www.osti.gov/servlets/purl/1046826.

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@article{osti_1046826,

  title        = {Solution-Based Synthesis of Crystalline Silicon from Liquid Silane through Laser and Chemical Annealing},

  author       = {Iyer, Ganjigunte R.  S. and Hobbie, Erik K. and Guruvenket, Srinivasan and Hoey, Justin M. and Anderson, Kenneth J. and Lovaasen, John and Gette, Cody and Schulz, Douglas L. and Swenson, Orven F. and Elangovan, Arumugasamy and Boudjouk, P.},

  abstractNote = {We report a solution process for the synthesis of crystalline silicon from the liquid silane precursor cyclohexasilane (Si6H12). Polysilane films were crystallized through thermal and laser annealing, with plasma hydrogenation at atmospheric pressure generating further structural changes in the films. The evolution from amorphous to microcrystalline is characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and impedance spectroscopy. A four-decade enhancement in the electrical conductivity is attributed to a disorder-order transition in a bonded Si network. Lastly, our results demonstrate a potentially attractive approach that employs a solution process coupled with ambient post-processing to produce crystalline silicon thin films.},

  doi          = {10.1021/am300334p},

  journal      = {ACS Applied Materials and Interfaces},

  number       = 5,

  volume       = 4,

  place        = {United States},

  year         = {Wed May 23 00:00:00 EDT 2012},

  month        = {Wed May 23 00:00:00 EDT 2012}

}

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Works referencing / citing this record:

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Title: Solution-Based Synthesis of Crystalline Silicon from Liquid Silane through Laser and Chemical Annealing

Abstract

Citation Formats

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