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Title: Influence of helium dilution of silane on microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by HW-CVD

Abstract

Highlights: ► nc-Si:H films synthesized using HW-CVD method from silane and helium gas mixture without hydrogen. ► Volume fraction of crystallites and its size in the films decreases with increase in He dilution of SiH{sub 4}. ► Increase in Urbach energy and defect density with increase in He dilution of SiH{sub 4}. ► Increasing He dilution, hydrogen bonding in the films shifts from Si-H{sub 2} and (Si-H{sub 2}){sub n} complexes to Si-H. ► Hydrogen content films were found to be <2.2 at.% but the bandgap remains as high as 2.0 eV or even more. -- Abstract: We report influence of helium dilution of silane in hot wire chemical vapor deposition for hydrogenated nano-crystalline silicon films. Structural properties of these films have been investigated by using Raman spectroscopy, low angle x-ray diffraction, Fourier transform infra-red spectroscopy and non-contact atomic force microscopy. Optical characterization has been performed by UV–visible spectroscopy. It has been observed that in contrast to conventional plasma enhanced chemical vapor deposition, the addition of helium with silane in hot wire chemical vapor deposition has an adverse effect on the crystallinity and the material properties. Hydrogen content in the films was found <2.2 at.% whereas the bandgap remain as highmore » as 2 eV or more. Increase in Urbach energy and defect density also suggests the deterioration effect of helium on material properties. The possible reasons for the deterioration of crystallinity and the material properties have been discussed.« less

Authors:
; ; ;  [1];  [2];  [3];  [4];  [4]
  1. School of Energy Studies, University of Pune, Pune 411 007 (India)
  2. Center for Materials for Electronics Technology (C-MET), Panchawati, Pune 411 008 (India)
  3. UGC-DAE-CSR, University Campus, Khandawa Road, Indore 452 017 (India)
  4. Department of Physics, University of Pune, Pune 411 007 (India)
Publication Date:
OSTI Identifier:
22215585
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTALS; DILUTION; ELECTRICAL PROPERTIES; FOURIER TRANSFORMATION; HELIUM; HYDROGEN; MICROSTRUCTURE; NANOSTRUCTURES; RAMAN SPECTROSCOPY; SILANES; SILICON; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Waman, V.S., Kamble, M.M., Ghosh, S.S., Hawaldar, R.R., Amalnerkar, D.P., Sathe, V.G., Gosavi, S.W., and Jadkar, S.R., E-mail: sandesh@physics.unipune.ac.in. Influence of helium dilution of silane on microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by HW-CVD. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.07.008.
Waman, V.S., Kamble, M.M., Ghosh, S.S., Hawaldar, R.R., Amalnerkar, D.P., Sathe, V.G., Gosavi, S.W., & Jadkar, S.R., E-mail: sandesh@physics.unipune.ac.in. Influence of helium dilution of silane on microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by HW-CVD. United States. doi:10.1016/J.MATERRESBULL.2012.07.008.
Waman, V.S., Kamble, M.M., Ghosh, S.S., Hawaldar, R.R., Amalnerkar, D.P., Sathe, V.G., Gosavi, S.W., and Jadkar, S.R., E-mail: sandesh@physics.unipune.ac.in. Thu . "Influence of helium dilution of silane on microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by HW-CVD". United States. doi:10.1016/J.MATERRESBULL.2012.07.008.
@article{osti_22215585,
title = {Influence of helium dilution of silane on microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by HW-CVD},
author = {Waman, V.S. and Kamble, M.M. and Ghosh, S.S. and Hawaldar, R.R. and Amalnerkar, D.P. and Sathe, V.G. and Gosavi, S.W. and Jadkar, S.R., E-mail: sandesh@physics.unipune.ac.in},
abstractNote = {Highlights: ► nc-Si:H films synthesized using HW-CVD method from silane and helium gas mixture without hydrogen. ► Volume fraction of crystallites and its size in the films decreases with increase in He dilution of SiH{sub 4}. ► Increase in Urbach energy and defect density with increase in He dilution of SiH{sub 4}. ► Increasing He dilution, hydrogen bonding in the films shifts from Si-H{sub 2} and (Si-H{sub 2}){sub n} complexes to Si-H. ► Hydrogen content films were found to be <2.2 at.% but the bandgap remains as high as 2.0 eV or even more. -- Abstract: We report influence of helium dilution of silane in hot wire chemical vapor deposition for hydrogenated nano-crystalline silicon films. Structural properties of these films have been investigated by using Raman spectroscopy, low angle x-ray diffraction, Fourier transform infra-red spectroscopy and non-contact atomic force microscopy. Optical characterization has been performed by UV–visible spectroscopy. It has been observed that in contrast to conventional plasma enhanced chemical vapor deposition, the addition of helium with silane in hot wire chemical vapor deposition has an adverse effect on the crystallinity and the material properties. Hydrogen content in the films was found <2.2 at.% whereas the bandgap remain as high as 2 eV or more. Increase in Urbach energy and defect density also suggests the deterioration effect of helium on material properties. The possible reasons for the deterioration of crystallinity and the material properties have been discussed.},
doi = {10.1016/J.MATERRESBULL.2012.07.008},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 11,
volume = 47,
place = {United States},
year = {2012},
month = {11}
}