Composition and method for removing photoresist materials from electronic components
Abstract
The invention is a combination of at least one dense phase fluid and at least one dense phase fluid modifier which can be used to contact substrates for electronic parts such as semiconductor wafers or chips to remove photoresist materials which are applied to the substrates during manufacture of the electronic parts. The dense phase fluid modifier is one selected from the group of cyclic, aliphatic or alicyclic compounds having the functional group: ##STR1## wherein Y is a carbon, oxygen, nitrogen, phosphorus or sulfur atom or a hydrocarbon group having from 1 to 10 carbon atoms, a halogen or halogenated hydrocarbon group having from 1 to 10 carbon atoms, silicon or a fluorinated silicon group; and wherein R.sub.1 and R.sub.2 can be the same or different substituents; and wherein, as in the case where X is nitrogen, R.sub.1 or R.sub.2 may not be present. The invention compositions generally are applied to the substrates in a pulsed fashion in order to remove the hard baked photoresist material remaining on the surface of the substrate after removal of soft baked photoresist material and etching of the barrier layer.
- Inventors:
-
- Santa Fe, NM
- Los Alamos, NM
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- OSTI Identifier:
- 874508
- Patent Number(s):
- 6403544
- Assignee:
- The Regents of the University of California (Los Alamos, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B08 - CLEANING B08B - CLEANING IN GENERAL
C - CHEMISTRY C11 - ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES C11D - DETERGENT COMPOSITIONS
- DOE Contract Number:
- W-7405-ENG-36
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- composition; method; removing; photoresist; materials; electronic; components; combination; dense; phase; fluid; modifier; contact; substrates; semiconductor; wafers; chips; remove; applied; manufacture; selected; cyclic; aliphatic; alicyclic; compounds; functional; str1; carbon; oxygen; nitrogen; phosphorus; sulfur; atom; hydrocarbon; 10; atoms; halogen; halogenated; silicon; fluorinated; rsub1; rsub2; substituents; compositions; pulsed; fashion; hard; baked; material; remaining; surface; substrate; removal; soft; etching; barrier; layer; phase fluid; electronic components; resist material; photoresist material; /510/8/134/430/438/
Citation Formats
Davenhall, Leisa B, and Rubin, James B. Composition and method for removing photoresist materials from electronic components. United States: N. p., 2002.
Web.
Davenhall, Leisa B, & Rubin, James B. Composition and method for removing photoresist materials from electronic components. United States.
Davenhall, Leisa B, and Rubin, James B. Tue .
"Composition and method for removing photoresist materials from electronic components". United States. https://www.osti.gov/servlets/purl/874508.
@article{osti_874508,
title = {Composition and method for removing photoresist materials from electronic components},
author = {Davenhall, Leisa B and Rubin, James B},
abstractNote = {The invention is a combination of at least one dense phase fluid and at least one dense phase fluid modifier which can be used to contact substrates for electronic parts such as semiconductor wafers or chips to remove photoresist materials which are applied to the substrates during manufacture of the electronic parts. The dense phase fluid modifier is one selected from the group of cyclic, aliphatic or alicyclic compounds having the functional group: ##STR1## wherein Y is a carbon, oxygen, nitrogen, phosphorus or sulfur atom or a hydrocarbon group having from 1 to 10 carbon atoms, a halogen or halogenated hydrocarbon group having from 1 to 10 carbon atoms, silicon or a fluorinated silicon group; and wherein R.sub.1 and R.sub.2 can be the same or different substituents; and wherein, as in the case where X is nitrogen, R.sub.1 or R.sub.2 may not be present. The invention compositions generally are applied to the substrates in a pulsed fashion in order to remove the hard baked photoresist material remaining on the surface of the substrate after removal of soft baked photoresist material and etching of the barrier layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2002},
month = {Tue Jan 01 00:00:00 EST 2002}
}