Control method and system for use when growing thin-films on semiconductor-based materials
Abstract
A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.
- Inventors:
-
- Kingston, TN
- Oak Ridge, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 874072
- Patent Number(s):
- 6306668
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC05-96OR22464
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- control; method; growing; thin-films; semiconductor-based; materials; process; growth; film; surface; substrate; exposing; vaporized; material; vacuum; hv; facility; involves; directing; electron; beam; exposed; electrons; diffracted; monitoring; pattern; settles; monitored; achieves; condition; indicative; grown; exposure; shut; otherwise; adjusted; facilitate; adjustment; crystallographic; orientation; mechanism; altering; electron beam; substrate surface; control method; semiconductor-based material; vaporized material; /438/117/
Citation Formats
McKee, Rodney A, and Walker, Frederick J. Control method and system for use when growing thin-films on semiconductor-based materials. United States: N. p., 2001.
Web.
McKee, Rodney A, & Walker, Frederick J. Control method and system for use when growing thin-films on semiconductor-based materials. United States.
McKee, Rodney A, and Walker, Frederick J. Mon .
"Control method and system for use when growing thin-films on semiconductor-based materials". United States. https://www.osti.gov/servlets/purl/874072.
@article{osti_874072,
title = {Control method and system for use when growing thin-films on semiconductor-based materials},
author = {McKee, Rodney A and Walker, Frederick J},
abstractNote = {A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}