Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries
Abstract
An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175964
- Patent Number(s):
- 7128889
- Application Number:
- 10/845,867
- Assignee:
- Carlisle, John A., Plainfield, IL (United States)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- W-31-109-ENG-38
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2004 May 13
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Carlisle, John A., Auciello, Orlando, and Birrell, James. Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries. United States: N. p., 2006.
Web.
Carlisle, John A., Auciello, Orlando, & Birrell, James. Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries. United States.
Carlisle, John A., Auciello, Orlando, and Birrell, James. Tue .
"Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries". United States. https://www.osti.gov/servlets/purl/1175964.
@article{osti_1175964,
title = {Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries},
author = {Carlisle, John A. and Auciello, Orlando and Birrell, James},
abstractNote = {An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {10}
}
Works referenced in this record:
Tight-binding molecular-dynamics simulation of impurities in ultrananocrystalline diamond grain boundaries
journal, December 2001
- Zapol, Peter; Sternberg, Michael; Curtiss, Larry A.
- Physical Review B, Vol. 65, Issue 4