Evaporation system and method for gas jet deposition of thin film materials
Abstract
A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.
- Inventors:
- Issue Date:
- Research Org.:
- Jet Process Corporation, New Haven, CT (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 869562
- Patent Number(s):
- 5356673
- Application Number:
- 07/670,693
- Assignee:
- Jet Process Corporation (New Haven, CT)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- FG02-88ER13818
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 1991 Mar 18
- Country of Publication:
- United States
- Language:
- English
- Subject:
- /427/118/
Citation Formats
Schmitt, Jerome J., and Halpern, Bret L. Evaporation system and method for gas jet deposition of thin film materials. United States: N. p., 1994.
Web.
Schmitt, Jerome J., & Halpern, Bret L. Evaporation system and method for gas jet deposition of thin film materials. United States.
Schmitt, Jerome J., and Halpern, Bret L. Sat .
"Evaporation system and method for gas jet deposition of thin film materials". United States. https://www.osti.gov/servlets/purl/869562.
@article{osti_869562,
title = {Evaporation system and method for gas jet deposition of thin film materials},
author = {Schmitt, Jerome J. and Halpern, Bret L.},
abstractNote = {A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}
Works referenced in this record:
High-quality MNS capacitors prepared by jet vapor deposition at room temperature
journal, September 1992
- Wang, D.; Ma, T. -P.; Golz, J. W.
- IEEE Electron Device Letters, Vol. 13, Issue 9