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Title: Evaporation system and method for gas jet deposition of thin film materials

Abstract

A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

Inventors:
 [1];  [2]
  1. (New Haven, CT)
  2. (Bethany, CT)
Issue Date:
Research Org.:
SCHMITT TECHNOLOGY ASSOC
OSTI Identifier:
869562
Patent Number(s):
5356673
Assignee:
Jet Process Corporation (New Haven, CT) CHO
DOE Contract Number:  
FG02-88ER13818
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
evaporation; method; gas; jet; deposition; film; materials; apparatus; depositing; films; metals; oxides; nitrides; temperature; relies; supersonic; free; inert; carrier; transport; vapor; species; generated; source; surface; substrate; vapors; solid; precursor; including; form; wires; powders; sources; carried; downstream; pressure; deposit; reactant; introduced; reaction; product; evaporated; material; moved; past; containing; discharge; speed; movement; sufficient; chemically; composed; gases; free jet; film materials; inert carrier; supersonic jet; vapor species; reactant gases; gas jet; film deposition; carrier gas; inert gas; reaction product; reactant gas; film material; precursor material; precursor materials; species generated; supersonic free; jet deposition; solid film; jet containing; /427/118/

Citation Formats

Schmitt, Jerome J., and Halpern, Bret L. Evaporation system and method for gas jet deposition of thin film materials. United States: N. p., 1994. Web.
Schmitt, Jerome J., & Halpern, Bret L. Evaporation system and method for gas jet deposition of thin film materials. United States.
Schmitt, Jerome J., and Halpern, Bret L. Sat . "Evaporation system and method for gas jet deposition of thin film materials". United States. https://www.osti.gov/servlets/purl/869562.
@article{osti_869562,
title = {Evaporation system and method for gas jet deposition of thin film materials},
author = {Schmitt, Jerome J. and Halpern, Bret L.},
abstractNote = {A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {1}
}

Patent:

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