Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
Abstract
High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide amore »
- Inventors:
-
- Lawrenceville, NJ
- Exton, PA
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 873046
- Patent Number(s):
- 6077722
- Assignee:
- BP Solarex (Frederick, MD)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B32 - LAYERED PRODUCTS B32B - LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- producing; film; photovoltaic; modules; integrity; interconnects; dual; layer; contacts; performance; produced; improved; special; process; advantageously; rear; contact; front; inner; comprise; transparent; conductive; oxide; outer; metal; dielectric; form; comprises; zinc; aluminum; silicon; dioxide; amorphous; silicon-containing; semiconductors; deposited; positioned; substrate; optional; superstrate; production; scribed; laser; simultaneously; trenched; drilled; trench; subsequently; filled; provide; superb; mechanical; electrical; interconnect; enhanced; environmental; protection; encapsulated; photovoltaic modules; front contact; photovoltaic module; conductive oxide; dual layer; inner layer; outer layer; dielectric layer; zinc oxide; amorphous silicon; metal oxide; oxide layer; film photovoltaic; silicon dioxide; transparent conductive; subsequently filled; aluminum outer; film semiconductor; special process; performance photovoltaic; improved interconnects; integrity interconnects; electrical interconnect; layer contacts; /438/136/
Citation Formats
Jansen, Kai W, and Maley, Nagi. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts. United States: N. p., 2000.
Web.
Jansen, Kai W, & Maley, Nagi. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts. United States.
Jansen, Kai W, and Maley, Nagi. Sat .
"Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts". United States. https://www.osti.gov/servlets/purl/873046.
@article{osti_873046,
title = {Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts},
author = {Jansen, Kai W and Maley, Nagi},
abstractNote = {High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2000},
month = {Sat Jan 01 00:00:00 EST 2000}
}
Works referenced in this record:
Commercialization of multijunction amorphous silicon modules
conference, January 1996
- Carlson, D. E.; Arya, R. R.; Bennett, M.
- Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996