Use of chemical-mechanical polishing for fabricating photonic bandgap structures
Abstract
A method is disclosed for fabricating a two- or three-dimensional photonic bandgap structure (also termed a photonic crystal, photonic lattice, or photonic dielectric structure). The method uses microelectronic integrated circuit (IC) processes to fabricate the photonic bandgap structure directly upon a silicon substrate. One or more layers of arrayed elements used to form the structure are deposited and patterned, with chemical-mechanical polishing being used to planarize each layer for uniformity and a precise vertical tolerancing of the layer. The use of chemical-mechanical planarization allows the photonic bandgap structure to be formed over a large area with a layer uniformity of about two-percent. Air-gap photonic bandgap structures can also be formed by removing a spacer material separating the arrayed elements by selective etching. The method is useful for fabricating photonic bandgap structures including Fabry-Perot resonators and optical filters for use at wavelengths in the range of about 0.2-20 .mu.m.
- Inventors:
-
- Albuquerque, NM
- Edgewood, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 872730
- Patent Number(s):
- 5998298
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- chemical-mechanical; polishing; fabricating; photonic; bandgap; structures; method; disclosed; two-; three-dimensional; structure; termed; crystal; lattice; dielectric; microelectronic; integrated; circuit; processes; fabricate; directly; silicon; substrate; layers; arrayed; elements; form; deposited; patterned; planarize; layer; uniformity; precise; vertical; tolerancing; planarization; allows; formed; two-percent; air-gap; removing; spacer; material; separating; selective; etching; useful; including; fabry-perot; resonators; optical; filters; wavelengths; range; 2-20; selective etching; photonic band; photonic bandgap; chemical-mechanical polishing; dielectric structure; optical filter; silicon substrate; integrated circuit; photonic crystal; spacer material; bandgap structure; selective etch; mechanical polishing; optical filters; fabry-perot resonators; /438/257/359/
Citation Formats
Fleming, James G, Lin, Shawn-Yu, Hetherington, Dale L, and Smith, Bradley K. Use of chemical-mechanical polishing for fabricating photonic bandgap structures. United States: N. p., 1999.
Web.
Fleming, James G, Lin, Shawn-Yu, Hetherington, Dale L, & Smith, Bradley K. Use of chemical-mechanical polishing for fabricating photonic bandgap structures. United States.
Fleming, James G, Lin, Shawn-Yu, Hetherington, Dale L, and Smith, Bradley K. Fri .
"Use of chemical-mechanical polishing for fabricating photonic bandgap structures". United States. https://www.osti.gov/servlets/purl/872730.
@article{osti_872730,
title = {Use of chemical-mechanical polishing for fabricating photonic bandgap structures},
author = {Fleming, James G and Lin, Shawn-Yu and Hetherington, Dale L and Smith, Bradley K},
abstractNote = {A method is disclosed for fabricating a two- or three-dimensional photonic bandgap structure (also termed a photonic crystal, photonic lattice, or photonic dielectric structure). The method uses microelectronic integrated circuit (IC) processes to fabricate the photonic bandgap structure directly upon a silicon substrate. One or more layers of arrayed elements used to form the structure are deposited and patterned, with chemical-mechanical polishing being used to planarize each layer for uniformity and a precise vertical tolerancing of the layer. The use of chemical-mechanical planarization allows the photonic bandgap structure to be formed over a large area with a layer uniformity of about two-percent. Air-gap photonic bandgap structures can also be formed by removing a spacer material separating the arrayed elements by selective etching. The method is useful for fabricating photonic bandgap structures including Fabry-Perot resonators and optical filters for use at wavelengths in the range of about 0.2-20 .mu.m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1999},
month = {Fri Jan 01 00:00:00 EST 1999}
}
Works referenced in this record:
Photonic band gap materials: the "semiconductors" of the future?
journal, January 1996
- Soukoulis, C. M.
- Physica Scripta, Vol. T66
Photonic band gaps in three dimensions: New layer-by-layer periodic structures
journal, February 1994
- Ho, K. M.; Chan, C. T.; Soukoulis, C. M.
- Solid State Communications, Vol. 89, Issue 5