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Title: Periodic dielectric structure for production of photonic band gap and method for fabricating the same

Abstract

A method for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap.

Inventors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Ames, IA
Issue Date:
Research Org.:
Ames Lab., Ames, IA (United States); Iowa State Univ., Ames, IA (United States)
OSTI Identifier:
869833
Patent Number(s):
5406573
Assignee:
Iowa State University Research Foundation (Ames, IA)
Patent Classifications (CPCs):
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
W-7405-ENG-82
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
periodic; dielectric; structure; production; photonic; band; gap; method; fabricating; exhibits; alignment; holes; formed; wafer; material; crystal; orientation; planar; layer; elongate; rods; section; formation; step; selectively; removing; layers; wafers; repeated; form; plurality; patterned; stack; rotating; successive; respect; next-previous; placing; stacking; results; four-layer; periodicity; exhibiting; photonic band; dielectric structure; selectively removing; band gap; dielectric material; periodic dielectric; elongate rod; crystal orientation; alignment holes; /372/

Citation Formats

Ozbay, Ekmel, Tuttle, Gary, Michel, Erick, Ho, Kai-Ming, Biswas, Rana, Chan, Che-Ting, and Soukoulis, Costas. Periodic dielectric structure for production of photonic band gap and method for fabricating the same. United States: N. p., 1995. Web.
Ozbay, Ekmel, Tuttle, Gary, Michel, Erick, Ho, Kai-Ming, Biswas, Rana, Chan, Che-Ting, & Soukoulis, Costas. Periodic dielectric structure for production of photonic band gap and method for fabricating the same. United States.
Ozbay, Ekmel, Tuttle, Gary, Michel, Erick, Ho, Kai-Ming, Biswas, Rana, Chan, Che-Ting, and Soukoulis, Costas. Sun . "Periodic dielectric structure for production of photonic band gap and method for fabricating the same". United States. https://www.osti.gov/servlets/purl/869833.
@article{osti_869833,
title = {Periodic dielectric structure for production of photonic band gap and method for fabricating the same},
author = {Ozbay, Ekmel and Tuttle, Gary and Michel, Erick and Ho, Kai-Ming and Biswas, Rana and Chan, Che-Ting and Soukoulis, Costas},
abstractNote = {A method for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {1}
}

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