Static ferroelectric memory transistor having improved data retention
Abstract
An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO.sub.3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.
- Inventors:
-
- (13609 Verbena Pl., N.E., Albuquerque, NM 87112)
- 7716 Wm. Moyers Ave., NE., Albuquerque, NM 87112
- 12808 Lillian Pl., NE., Albuquerque, NM 87112
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 870703
- Patent Number(s):
- 5578846
- Assignee:
- Evans, Jr., Joseph T. (13609 Verbena Pl., N.E., Albuquerque, NM 87112);Warren, William L. (7716 Wm. Moyers Ave., NE., Albuquerque, NM 87112);Tuttle, Bruce A. (12808 Lillian Pl., NE., Albuquerque, NM 87112)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-76
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- static; ferroelectric; memory; transistor; improved; data; retention; fet; structure; layer; doped; reduce; loss; according; semiconductor; contacts; thereon; separated; bottom; electrode; sandwiched; constructed; perovskite; chemical; composition; site; comprises; elements; dopant; element; oxidation; sufficient; concentration; impede; shifts; resistance; measured; time; preferably; pb; a-site; zr; respectively; preferred; b-site; dopants; niobium; tantalum; tungsten; concentrations; perovskite structure; chemical composition; semiconductor layer; preferably comprises; resistance measured; sufficient concentration; structure preferably; ferroelectric layer; ferroelectric memory; ferroelectric fet; bottom electrode; dopant element; improved data; improved ferroelectric; memory transistor; site comprises; preferably comprise; /257/
Citation Formats
Evans, Jr., Joseph T., Warren, William L, and Tuttle, Bruce A. Static ferroelectric memory transistor having improved data retention. United States: N. p., 1996.
Web.
Evans, Jr., Joseph T., Warren, William L, & Tuttle, Bruce A. Static ferroelectric memory transistor having improved data retention. United States.
Evans, Jr., Joseph T., Warren, William L, and Tuttle, Bruce A. Mon .
"Static ferroelectric memory transistor having improved data retention". United States. https://www.osti.gov/servlets/purl/870703.
@article{osti_870703,
title = {Static ferroelectric memory transistor having improved data retention},
author = {Evans, Jr., Joseph T. and Warren, William L and Tuttle, Bruce A},
abstractNote = {An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO.sub.3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1996},
month = {Mon Jan 01 00:00:00 EST 1996}
}