Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory

Title: Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory

Abstract

A compact large density memory piezoactuated storage device and process for its fabrication provides an integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure that features an integrated large density array of nanotips made of wear-resistant conductive ultrananocrystalline diamond (UNCD) in which the tips are actuated via a piezoelectric thin film integrated with the UNCD tips. The tips of the special piezoactuated storage device effectively contact an underlying metal layer (top electrode) deposited on a polarizable ferroelectric layer that is grown on top of another metal layer (bottom electrode) to form a ferroelectric capacitor. Information is imprinted in the ferroelectric layer by the polarization induced by the application of a voltage pulse between the top and bottom electrodes through the conductive UNCD tips. This integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure can be efficiently used to imprint data in the ferroelectric layer for memory storage with high density in the gigabit (Gb) to terabit (Tb) range. An alternative memory media to the ferroelectric layer can be a phase change material that exhibits two orders of magnitude difference in electrical resistance between amorphous and crystalline phases.

Inventors:: Auciello, Orlando H.

Issue Date:: 2009-10-13

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1531605

Patent Number(s):: 7602105

Application Number:: 11/789,344

Assignee:: UChicago Argonne, LLC (Argonne, IL)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T29/42 - Piezoelectric device making

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L45/144 - {Tellurides, e.g. GeSbTe}

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
G11C11/22 - using ferroelectric elements {

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L45/1233 - {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
H01L45/06 - {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T29/49005 - Acoustic transducer

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
G11C13/0004 - {comprising amorphous/crystalline phase transition cells}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T29/49146 - with encapsulating, e.g., potting, etc.

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/20 - including piezo-electric components

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T29/49156 - with selective destruction of conductive paths

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/2472 - {the switching components having a common active material layer}

Show less

DOE Contract Number:: AC02-06CH11357; W-31-109-ENG-38

Resource Type:: Patent

Resource Relation:: Patent File Date: 2007-04-24

Country of Publication:: United States

Language:: English

Citation Formats


                    Auciello, Orlando H. Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory.  United States: N. p., 2009. 
        Web.

Copy to clipboard


                    Auciello, Orlando H. Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory.  United States.

Copy to clipboard


                    Auciello, Orlando H. Tue .  
        "Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory".  United States.  https://www.osti.gov/servlets/purl/1531605.

Copy to clipboard


                    
@article{osti_1531605,

  title        = {Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory},

  author       = {Auciello, Orlando H.},

  abstractNote = {A compact large density memory piezoactuated storage device and process for its fabrication provides an integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure that features an integrated large density array of nanotips made of wear-resistant conductive ultrananocrystalline diamond (UNCD) in which the tips are actuated via a piezoelectric thin film integrated with the UNCD tips. The tips of the special piezoactuated storage device effectively contact an underlying metal layer (top electrode) deposited on a polarizable ferroelectric layer that is grown on top of another metal layer (bottom electrode) to form a ferroelectric capacitor. Information is imprinted in the ferroelectric layer by the polarization induced by the application of a voltage pulse between the top and bottom electrodes through the conductive UNCD tips. This integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure can be efficiently used to imprint data in the ferroelectric layer for memory storage with high density in the gigabit (Gb) to terabit (Tb) range. An alternative memory media to the ferroelectric layer can be a phase change material that exhibits two orders of magnitude difference in electrical resistance between amorphous and crystalline phases.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2009},

  month        = {10}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Ferroelectric Record Carrier, Its Method of Manufacture and Micro-Tip Recording System Incorporating Same
patent-application, May 2009

Gidon, Serge
US Patent Application 12/262655; 20090116367
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090116367%22.PGNR.&OS=DN/20090116367&RS=DN/20090116367

Apparatus and method for a ferroelectric disk and ferroelectric disk drive
patent-application, December 2008

Strom, Brian D.
US Patent Application 11/899791; 20080310052
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220080310052%22.PGNR.&OS=DN/20080310052&RS=DN/20080310052

Diamond AFM probe with piezoelectric sensor and actuator
conference, January 2003

Shibata, T.; Unno, K.; Makino, E.
IEEE International Solid-State Sensors and Actuators Conference, TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)
https://doi.org/10.1109/SENSOR.2003.1215363

Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor
patent, September 2003

Krauss, Alan R.; Gruen, Dieter M.; Pellin, Michael J.
US Patent Document 6,613,601
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=6613601

Novel ultrananocrystalline diamond probes for high-resolution low-wear nanolithographic techniques
patent-application, September 2007

Sumant, Anirudha; Carpick, Robert; Auciello, Orlando
US Patent Application 11/542812; 20070220959
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220070220959%22.PGNR.&OS=DN/20070220959&RS=DN/20070220959

Electronic device and electronic apparatus
patent-application, October 2002

Iwashita, Setsuya; Higuchi, Takamitsu; Miyazawa, Hiromu
US Patent Application 10/108180; 20020149019
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220020149019%22.PGNR.&OS=DN/20020149019&RS=DN/20020149019

Works referencing / citing this record:

Low-stress doped ultrananocrystalline diamond
patent, October 2016

Sumant, Anirudha V.; Buja, Federico; van Spengen, Willem Merlijn
US Patent Document 9,475,690
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9475690

Materials and methods for the preparation of nanocomposites
patent, January 2018

Nag, Angshuman; Talapin, Dmitri V.
US Patent Document 9,882,001
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9882001

Piezoelectric actuator and method for producing a piezoelectric actuator
patent, August 2012

Dorner-Reisel, Annett
US Patent Document 8,237,333
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=8237333

NEMS devices with series ferroelectric negative capacitor
patent, September 2017

Alam, Muhammad Ashraful; Masuduzzaman, Muhammad; Jain, Ankit K.
US Patent Document 9,755,041
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9755041

Materials and methods for the preparation of nanocomposites
patent, November 2018

Talapin, Dmitri V.; Kovalenko, Maksym V.; Lee, Jong Soo
US Patent Document 10,121,952
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=10121952

Integration of dissimilar materials for advanced multifunctional devices
patent, September 2010

Auciello, Orlando H.; Carlisle, John A.; Gerbi, Jennifer E.
US Patent Document 7,791,201
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=7791201

Materials and methods for the preparation of nanocomposites
patent, May 2016

Talapin, Dmitri V.; Kovalenko, Maksym V.; Lee, Jong Soo
US Patent Document 9,346,998
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9346998

Similar Records in DOE Patents and OSTI.GOV collections:

Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory

Patent Auciello, Orlando H.

A process for fabricating a piezoactuated storage device having a tip array and a memory media, which includes but is not limited to: etching the regions on the surface of the silicon wafer to produce substantially pyramidal etch pits by anisotropic etching or chemical etching with potassium hydroxide (KOH); growing an oxide layer on a top surface of the silicon wafer and in the substantially pyramidal etch pits to produce oxidation sharpening of the substantially pyramidal etch pits; forming an array of conductive tips of a nanocarbon film of nanostructured carbon material by deposition, wherein the nanostructured carbon material ismore »« less
Full Text Available
Flexure-based, tip-tilt-piston actuation micro-array

Patent Hopkins, Jonathan; Panas, Robert Matthew

A flexure-based micro-array having a plurality of micro-assemblies, each comprising: an object; and at least three electrostatic actuation modules for tipping, tilting, and/or piston-actuating the object, each actuation module comprising: a base with first and second electrodes electrically isolated from each other; an electrically conductive lever arm; a first flexure bearing suspending the lever arm adjacent the first and second electrodes so that electrical activation of at least one of the first and second electrodes produces an electrostatic moment of force on the lever arm to resiliently bias the first flexure bearing and pivot the lever arm about a fulcrum;more »« less
Full Text Available
Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond

Patent Sumant, Anirudha V.; Baryshev, Sergey V.; Antipov, Sergey P.

A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sitesmore »« less
Full Text Available
Shape memory system with integrated actuation using embedded particles

Patent Buckley, Patrick R.; Maitland, Duncan J.

A shape memory material with integrated actuation using embedded particles. One embodiment provides a shape memory material apparatus comprising a shape memory material body and magnetic pieces in the shape memory material body. Another embodiment provides a method of actuating a device to perform an activity on a subject comprising the steps of positioning a shape memory material body in a desired position with regard to the subject, the shape memory material body capable of being formed in a specific primary shape, reformed into a secondary stable shape, and controllably actuated to recover the specific primary shape; including pieces inmore »« less
Full Text Available
Shape memory system with integrated actuation using embedded particles

Patent Buckley, Patrick R [New York, NY]; Maitland, Duncan J [Pleasant Hill, CA]

A shape memory material with integrated actuation using embedded particles. One embodiment provides a shape memory material apparatus comprising a shape memory material body and magnetic pieces in the shape memory material body. Another embodiment provides a method of actuating a device to perform an activity on a subject comprising the steps of positioning a shape memory material body in a desired position with regard to the subject, the shape memory material body capable of being formed in a specific primary shape, reformed into a secondary stable shape, and controllably actuated to recover the specific primary shape; including pieces inmore »« less
Full Text Available

Similar Records

Title: Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory

Abstract

Citation Formats

Ferroelectric Record Carrier, Its Method of Manufacture and Micro-Tip Recording System Incorporating Same patent-application, May 2009

Apparatus and method for a ferroelectric disk and ferroelectric disk drive patent-application, December 2008

Diamond AFM probe with piezoelectric sensor and actuator conference, January 2003

Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor patent, September 2003

Novel ultrananocrystalline diamond probes for high-resolution low-wear nanolithographic techniques patent-application, September 2007

Electronic device and electronic apparatus patent-application, October 2002

Low-stress doped ultrananocrystalline diamond patent, October 2016

Materials and methods for the preparation of nanocomposites patent, January 2018

Piezoelectric actuator and method for producing a piezoelectric actuator patent, August 2012

NEMS devices with series ferroelectric negative capacitor patent, September 2017

Materials and methods for the preparation of nanocomposites patent, November 2018

Integration of dissimilar materials for advanced multifunctional devices patent, September 2010

Materials and methods for the preparation of nanocomposites patent, May 2016

Ferroelectric Record Carrier, Its Method of Manufacture and Micro-Tip Recording System Incorporating Same
patent-application, May 2009

Apparatus and method for a ferroelectric disk and ferroelectric disk drive
patent-application, December 2008

Diamond AFM probe with piezoelectric sensor and actuator
conference, January 2003

Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor
patent, September 2003

Novel ultrananocrystalline diamond probes for high-resolution low-wear nanolithographic techniques
patent-application, September 2007

Electronic device and electronic apparatus
patent-application, October 2002

Low-stress doped ultrananocrystalline diamond
patent, October 2016

Materials and methods for the preparation of nanocomposites
patent, January 2018

Piezoelectric actuator and method for producing a piezoelectric actuator
patent, August 2012

NEMS devices with series ferroelectric negative capacitor
patent, September 2017

Materials and methods for the preparation of nanocomposites
patent, November 2018

Integration of dissimilar materials for advanced multifunctional devices
patent, September 2010

Materials and methods for the preparation of nanocomposites
patent, May 2016