Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory
Abstract
A compact large density memory piezoactuated storage device and process for its fabrication provides an integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure that features an integrated large density array of nanotips made of wear-resistant conductive ultrananocrystalline diamond (UNCD) in which the tips are actuated via a piezoelectric thin film integrated with the UNCD tips. The tips of the special piezoactuated storage device effectively contact an underlying metal layer (top electrode) deposited on a polarizable ferroelectric layer that is grown on top of another metal layer (bottom electrode) to form a ferroelectric capacitor. Information is imprinted in the ferroelectric layer by the polarization induced by the application of a voltage pulse between the top and bottom electrodes through the conductive UNCD tips. This integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure can be efficiently used to imprint data in the ferroelectric layer for memory storage with high density in the gigabit (Gb) to terabit (Tb) range. An alternative memory media to the ferroelectric layer can be a phase change material that exhibits two orders of magnitude difference in electrical resistance between amorphous and crystalline phases.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531605
- Patent Number(s):
- 7,602,105
- Application Number:
- 11/789,344
- Assignee:
- UChicago Argonne, LLC (Argonne, IL)
- DOE Contract Number:
- AC02-06CH11357; W-31-109-ENG-38
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2007-04-24
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Auciello, Orlando H. Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory. United States: N. p., 2009.
Web.
Auciello, Orlando H. Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory. United States.
Auciello, Orlando H. Tue .
"Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory". United States. https://www.osti.gov/servlets/purl/1531605.
@article{osti_1531605,
title = {Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory},
author = {Auciello, Orlando H.},
abstractNote = {A compact large density memory piezoactuated storage device and process for its fabrication provides an integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure that features an integrated large density array of nanotips made of wear-resistant conductive ultrananocrystalline diamond (UNCD) in which the tips are actuated via a piezoelectric thin film integrated with the UNCD tips. The tips of the special piezoactuated storage device effectively contact an underlying metal layer (top electrode) deposited on a polarizable ferroelectric layer that is grown on top of another metal layer (bottom electrode) to form a ferroelectric capacitor. Information is imprinted in the ferroelectric layer by the polarization induced by the application of a voltage pulse between the top and bottom electrodes through the conductive UNCD tips. This integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure can be efficiently used to imprint data in the ferroelectric layer for memory storage with high density in the gigabit (Gb) to terabit (Tb) range. An alternative memory media to the ferroelectric layer can be a phase change material that exhibits two orders of magnitude difference in electrical resistance between amorphous and crystalline phases.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {10}
}
Works referenced in this record:
Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor
patent, September 2003
- Krauss, Alan R.; Gruen, Dieter M.; Pellin, Michael J.
- US Patent Document 6,613,601
Novel ultrananocrystalline diamond probes for high-resolution low-wear nanolithographic techniques
patent-application, September 2007
- Sumant, Anirudha; Carpick, Robert; Auciello, Orlando
- US Patent Application 11/542812; 20070220959
Works referencing / citing this record:
Materials and methods for the preparation of nanocomposites
patent, January 2018
- Nag, Angshuman; Talapin, Dmitri V.
- US Patent Document 9,882,001
Materials and methods for the preparation of nanocomposites
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- Talapin, Dmitri V.; Kovalenko, Maksym V.; Lee, Jong Soo
- US Patent Document 9,346,998
Piezoelectric actuator and method for producing a piezoelectric actuator
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- Dorner-Reisel, Annett
- US Patent Document 8,237,333
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patent, September 2017
- Alam, Muhammad Ashraful; Masuduzzaman, Muhammad; Jain, Ankit K.
- US Patent Document 9,755,041
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- Talapin, Dmitri V.; Kovalenko, Maksym V.; Lee, Jong Soo
- US Patent Document 10,121,952
Low-stress doped ultrananocrystalline diamond
patent, October 2016
- Sumant, Anirudha V.; Buja, Federico; van Spengen, Willem Merlijn
- US Patent Document 9,475,690
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patent, September 2010
- Auciello, Orlando H.; Carlisle, John A.; Gerbi, Jennifer E.
- US Patent Document 7,791,201