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Title: Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond

A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1295657
Assignee:
UCHICAGO ARGONNE, LLC (Chicago, IL) ANL
Patent Number(s):
9,418,814
Application Number:
14/594,949
Contract Number:
AC02-06CH11357; SC0009572
Resource Relation:
Patent File Date: 2015 Jan 12
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

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