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Title: Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory

Abstract

A process for fabricating a piezoactuated storage device having a tip array and a memory media, which includes but is not limited to: etching the regions on the surface of the silicon wafer to produce substantially pyramidal etch pits by anisotropic etching or chemical etching with potassium hydroxide (KOH); growing an oxide layer on a top surface of the silicon wafer and in the substantially pyramidal etch pits to produce oxidation sharpening of the substantially pyramidal etch pits; forming an array of conductive tips of a nanocarbon film of nanostructured carbon material by deposition, wherein the nanostructured carbon material is ultrananocrystalline diamond (UNCD), ta-C, or diamond-like carbon films; and forming an oxygen diffusion barrier layer by deposition of a TiAl, TaAl, or any other oxygen diffusion barrier layer material on the nanocarbon film.

Inventors:
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531850
Patent Number(s):
8,424,175
Application Number:
12/556,771
Assignee:
UChicago Argonne, LLC (Argonne, IL)
DOE Contract Number:  
AC02-06CH11357; W-31-109-ENG-38
Resource Type:
Patent
Resource Relation:
Patent File Date: 2009-09-10
Country of Publication:
United States
Language:
English

Citation Formats

Auciello, Orlando H. Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory. United States: N. p., 2013. Web.
Auciello, Orlando H. Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory. United States.
Auciello, Orlando H. Tue . "Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory". United States. https://www.osti.gov/servlets/purl/1531850.
@article{osti_1531850,
title = {Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory},
author = {Auciello, Orlando H.},
abstractNote = {A process for fabricating a piezoactuated storage device having a tip array and a memory media, which includes but is not limited to: etching the regions on the surface of the silicon wafer to produce substantially pyramidal etch pits by anisotropic etching or chemical etching with potassium hydroxide (KOH); growing an oxide layer on a top surface of the silicon wafer and in the substantially pyramidal etch pits to produce oxidation sharpening of the substantially pyramidal etch pits; forming an array of conductive tips of a nanocarbon film of nanostructured carbon material by deposition, wherein the nanostructured carbon material is ultrananocrystalline diamond (UNCD), ta-C, or diamond-like carbon films; and forming an oxygen diffusion barrier layer by deposition of a TiAl, TaAl, or any other oxygen diffusion barrier layer material on the nanocarbon film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {4}
}

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