Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory
Abstract
A process for fabricating a piezoactuated storage device having a tip array and a memory media, which includes but is not limited to: etching the regions on the surface of the silicon wafer to produce substantially pyramidal etch pits by anisotropic etching or chemical etching with potassium hydroxide (KOH); growing an oxide layer on a top surface of the silicon wafer and in the substantially pyramidal etch pits to produce oxidation sharpening of the substantially pyramidal etch pits; forming an array of conductive tips of a nanocarbon film of nanostructured carbon material by deposition, wherein the nanostructured carbon material is ultrananocrystalline diamond (UNCD), ta-C, or diamond-like carbon films; and forming an oxygen diffusion barrier layer by deposition of a TiAl, TaAl, or any other oxygen diffusion barrier layer material on the nanocarbon film.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531850
- Patent Number(s):
- 8424175
- Application Number:
- 12/556,771
- Assignee:
- UChicago Argonne, LLC (Argonne, IL)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- AC02-06CH11357; W-31-109-ENG-38
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2009-09-10
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Auciello, Orlando H. Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory. United States: N. p., 2013.
Web.
Auciello, Orlando H. Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory. United States.
Auciello, Orlando H. Tue .
"Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory". United States. https://www.osti.gov/servlets/purl/1531850.
@article{osti_1531850,
title = {Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory},
author = {Auciello, Orlando H.},
abstractNote = {A process for fabricating a piezoactuated storage device having a tip array and a memory media, which includes but is not limited to: etching the regions on the surface of the silicon wafer to produce substantially pyramidal etch pits by anisotropic etching or chemical etching with potassium hydroxide (KOH); growing an oxide layer on a top surface of the silicon wafer and in the substantially pyramidal etch pits to produce oxidation sharpening of the substantially pyramidal etch pits; forming an array of conductive tips of a nanocarbon film of nanostructured carbon material by deposition, wherein the nanostructured carbon material is ultrananocrystalline diamond (UNCD), ta-C, or diamond-like carbon films; and forming an oxygen diffusion barrier layer by deposition of a TiAl, TaAl, or any other oxygen diffusion barrier layer material on the nanocarbon film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 23 00:00:00 EDT 2013},
month = {Tue Apr 23 00:00:00 EDT 2013}
}
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