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Title: Ferroelectric tunneling element and memory applications which utilize the tunneling element

Abstract

A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

Inventors:
 [1];  [1];  [1];  [1];  [2]
  1. Knoxville, TN
  2. Oak Ridge, TN
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1012818
Patent Number(s):
7,759,713
Application Number:
11/368,550
Assignee:
UT-Battelle, LLC (Oak Ridge, TN) ORO
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Kalinin, Sergei V, Christen, Hans M, Baddorf, Arthur P, Meunier, Vincent, and Lee, Ho Nyung. Ferroelectric tunneling element and memory applications which utilize the tunneling element. United States: N. p., 2010. Web.
Kalinin, Sergei V, Christen, Hans M, Baddorf, Arthur P, Meunier, Vincent, & Lee, Ho Nyung. Ferroelectric tunneling element and memory applications which utilize the tunneling element. United States.
Kalinin, Sergei V, Christen, Hans M, Baddorf, Arthur P, Meunier, Vincent, and Lee, Ho Nyung. Tue . "Ferroelectric tunneling element and memory applications which utilize the tunneling element". United States. https://www.osti.gov/servlets/purl/1012818.
@article{osti_1012818,
title = {Ferroelectric tunneling element and memory applications which utilize the tunneling element},
author = {Kalinin, Sergei V and Christen, Hans M and Baddorf, Arthur P and Meunier, Vincent and Lee, Ho Nyung},
abstractNote = {A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {7}
}

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