Spin current devices and methods of fabrication thereof
Abstract
Pure spin current devices are provided. The devices include sandwich structures of metal/magnetic insulator/metal. A first current injected in a first metal layer generates a pure spin current. The spin current can be switched between “on” and “off” states by controlling an in-plane magnetization orientation of the magnetic insulator. In the “on” state, the pure spin current is transmitted from the first metal layer to the second metal layer, through the magnetic insulator layer. The pure spin current in the second metal layer induces generation of a second charge current. In the “off” state, the pure spin current is absorbed at the interface between the first metal layer and the metal insulator. Such structures can serve as pure spin current valve devices or provide analog functionality, as rotating the in-plane magnetization provides analog sinusoidal modulation of the spin current.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1532077
- Patent Number(s):
- 9929338
- Application Number:
- 15/289,850
- Assignee:
- The Regents of the University of California (Oakland, CA)
- DOE Contract Number:
- SC0012670
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016-10-10
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Shi, Jing, Li, Junxue, Xu, Yadong, Aldosary, Mohammed, Tang, Chi, and Lake, Roger. Spin current devices and methods of fabrication thereof. United States: N. p., 2018.
Web.
Shi, Jing, Li, Junxue, Xu, Yadong, Aldosary, Mohammed, Tang, Chi, & Lake, Roger. Spin current devices and methods of fabrication thereof. United States.
Shi, Jing, Li, Junxue, Xu, Yadong, Aldosary, Mohammed, Tang, Chi, and Lake, Roger. Tue .
"Spin current devices and methods of fabrication thereof". United States. https://www.osti.gov/servlets/purl/1532077.
@article{osti_1532077,
title = {Spin current devices and methods of fabrication thereof},
author = {Shi, Jing and Li, Junxue and Xu, Yadong and Aldosary, Mohammed and Tang, Chi and Lake, Roger},
abstractNote = {Pure spin current devices are provided. The devices include sandwich structures of metal/magnetic insulator/metal. A first current injected in a first metal layer generates a pure spin current. The spin current can be switched between “on” and “off” states by controlling an in-plane magnetization orientation of the magnetic insulator. In the “on” state, the pure spin current is transmitted from the first metal layer to the second metal layer, through the magnetic insulator layer. The pure spin current in the second metal layer induces generation of a second charge current. In the “off” state, the pure spin current is absorbed at the interface between the first metal layer and the metal insulator. Such structures can serve as pure spin current valve devices or provide analog functionality, as rotating the in-plane magnetization provides analog sinusoidal modulation of the spin current.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 27 00:00:00 EDT 2018},
month = {Tue Mar 27 00:00:00 EDT 2018}
}
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