Method of fabricating a back-contact solar cell and device thereof
Abstract
Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.
- Inventors:
- Issue Date:
- Research Org.:
- SunPower Corporation, San Jose, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1279969
- Patent Number(s):
- 9,406,821
- Application Number:
- 14/314,938
- Assignee:
- SunPower Corporation (San Jose, CA)
- DOE Contract Number:
- FC36-07GO17043
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Jun 25
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE
Citation Formats
Li, Bo, Smith, David, and Cousins, Peter. Method of fabricating a back-contact solar cell and device thereof. United States: N. p., 2016.
Web.
Li, Bo, Smith, David, & Cousins, Peter. Method of fabricating a back-contact solar cell and device thereof. United States.
Li, Bo, Smith, David, and Cousins, Peter. Tue .
"Method of fabricating a back-contact solar cell and device thereof". United States. https://www.osti.gov/servlets/purl/1279969.
@article{osti_1279969,
title = {Method of fabricating a back-contact solar cell and device thereof},
author = {Li, Bo and Smith, David and Cousins, Peter},
abstractNote = {Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {8}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Method of fabricating polysilicon emitters for solar cells
patent, October 1991
- Swanson, Richard; Gan, Jon-Yiew
- US Patent Document 5,057,439