Method of fabricating a back-contact solar cell and device thereof

Title: Method of fabricating a back-contact solar cell and device thereof

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Inventors:: Li, Bo; Smith, David; Cousins, Peter

Issue Date:: 2016-08-02

OSTI Identifier:: 1279969

Assignee:: SunPower Corporation (San Jose, CA) GFO

Patent Number(s):: 9,406,821

Application Number:: 14/314,938

Contract Number:: FC36-07GO17043

Resource Relation:: Patent File Date: 2014 Jun 25

Research Org:: SunPower Corporation, San Jose, CA (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Full Text
View Full Text

Have feedback or suggestions for a way to improve these results? !

Save / Share this Record no
Export Metadata
- Endnote
- RIS
- Excel
- CSV
- XML
Send to Email

Send to Email

Email address:

Content:

Works referenced in this record:

Method of fabricating polysilicon emitters for solar cells
patent, October 1991

Swanson, Richard; Gan, Jon-Yiew
US Patent Document 5,057,439
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/5057439

Similar Records

Similar records in DOepatents and OSTI.GOV collections:

Method of fabricating a back-contact solar cell and device thereof

Patent Li, Bo ; Smith, David ; Cousins, Peter

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.
Full Text Available July 2014
Method of forming contacts for a back-contact solar cell

Patent Manning, Jane

Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.
Full Text Available July 2013
Method of forming contacts for a back-contact solar cell

Patent Manning, Jane

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.
Full Text Available July 2014
Method or forming emitters for a back-contact solar cell

Patent Li, Bo ; Cousins, Peter J. ; Smith, David D.

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.
Full Text Available August 2014
Method of forming emitters for a back-contact solar cell

Patent Li, Bo ; Cousins, Peter J ; Smith, David D

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.
Full Text Available December 2014