Method of fabricating a back-contact solar cell and device thereof

Title: Method of fabricating a back-contact solar cell and device thereof

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Inventors:: Li, Bo; Smith, David; Cousins, Peter

Issue Date:: 2016-08-02

OSTI Identifier:: 1279969

Assignee:: SunPower Corporation (San Jose, CA) GFO

Patent Number(s):: 9,406,821

Application Number:: 14/314,938

Contract Number:: FC36-07GO17043

Resource Relation:: Patent File Date: 2014 Jun 25

Research Org:: SunPower Corporation, San Jose, CA (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE

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Other works cited in this record:

Method of fabricating polysilicon emitters for solar cells
patent, October 1991

Swanson, Richard; Gan, Jon-Yiew
US Patent Document 5,057,439
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/5057439

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