Method of fabricating a back-contact solar cell and device thereof

Li, Bo; Smith, David; Cousins, Peter

Title: Method of fabricating a back-contact solar cell and device thereof

Abstract

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Inventors:: Li, Bo; Smith, David; Cousins, Peter

Issue Date:: 2014-07-29

Research Org.:: SunPower Corporation, San Jose, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1149917

Patent Number(s):: 8790957

Application Number:: 12/972,247

Assignee:: SunPower Corporation (San Jose, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02363 - {of the semiconductor body itself, e.g. textured active layers}
H01L31/0682 - {back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells}
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/546 - Polycrystalline silicon PV cells
Y02E10/547 - Monocrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Show less

DOE Contract Number:: FC36-07GO17043

Resource Type:: Patent

Resource Relation:: Patent File Date: 2010 Dec 17

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Li, Bo, Smith, David, and Cousins, Peter. Method of fabricating a back-contact solar cell and device thereof.  United States: N. p., 2014. 
        Web.

Copy to clipboard


                    Li, Bo, Smith, David, & Cousins, Peter. Method of fabricating a back-contact solar cell and device thereof.  United States.

Copy to clipboard


                    Li, Bo, Smith, David, and Cousins, Peter. Tue .  
        "Method of fabricating a back-contact solar cell and device thereof".  United States.  https://www.osti.gov/servlets/purl/1149917.

Copy to clipboard


                    
@article{osti_1149917,

  title        = {Method of fabricating a back-contact solar cell and device thereof},

  author       = {Li, Bo and Smith, David and Cousins, Peter},

  abstractNote = {Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {7}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Dual damascene patterned conductor layer formation method without etch stop layer
patent, September 2001

Liu, Chung-Shi; Yu, Chen-Hua
US Patent Document 6,287,961
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6287961

Back side contact solar cell structures and fabrication processes
patent-application, July 2007

De Ceuster, Denis; Cousins, Peter John; Swanson, Richard M.
US Patent Application 11/643743; 20070151598
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20070151598

Mono-Silicon Solar Cells
patent-application, February 2010

Shan, Wei; Xiang, Xiao-Dong
US Patent Application 12/254316; 20100029039
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20100029039

Method of fabricating polysilicon emitters for solar cells
patent, October 1991

Swanson, Richard M.; Gan, Jon-Yiew
US Patent Document 5,057,439
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5057439

Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions
patent-application, December 2009

De Ceuster, Denis; Cousins, Peter John; Smith, David D.
US Patent Application 12/392923; 20090308438
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20090308438

Extrusion/dispensing systems and methods
patent-application, May 2007

Fork, David K.; Hantschel, Thomas
US Patent Application 11/282829; 20070108229
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20070108229

Solar Cell Having Doped Semiconductor Heterojunction Contacts
patent-application, November 2007

Cousins, Peter
US Patent Application 11/381681; 20070256728
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20070256728

Solar cell
patent-application, October 2007

Park, Sang-Wook
US Patent Application 11/727355; 20070235075
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20070235075

Solar Cell Fabrication Using Extruded Dopant-Bearing Materials
patent-application, June 2008

Fork, David K.; Shrader, Eric J.
US Patent Application 11/609825; 20080138456
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20080138456

Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma
patent, March 1999

Yu, Chen-Hua
US Patent Document 5,888,309
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5888309

Mono-silicon solar cells
patent, January 2013

Shan, Wei; Xiang, Xiao-Dong
US Patent Document 8,349,644
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8349644

Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells
patent-application, February 2008

Teppe, Andreas; Engelhart, Peter; Muller, Jorg
US Patent Document 11/665318; 20080035198
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20080035198

Similar Records in DOE Patents and OSTI.GOV collections:

Method of fabricating a back-contact solar cell and device thereof

Patent Li, Bo; Smith, David; Cousins, Peter

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.
Full Text Available
Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias

Patent Gee, James M; Schmit, Russell R.

Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.
Full Text Available
Method of forming contacts for a back-contact solar cell

Patent Manning, Jane

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.
Full Text Available
Method of forming contacts for a back-contact solar cell

Patent Manning, Jane

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.
Full Text Available
Method of forming contacts for a back-contact solar cell

Patent Manning, Jane

Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.
Full Text Available

Similar Records

Title: Method of fabricating a back-contact solar cell and device thereof

Abstract

Citation Formats

Dual damascene patterned conductor layer formation method without etch stop layer patent, September 2001

Back side contact solar cell structures and fabrication processes patent-application, July 2007

Mono-Silicon Solar Cells patent-application, February 2010

Method of fabricating polysilicon emitters for solar cells patent, October 1991

Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions patent-application, December 2009

Extrusion/dispensing systems and methods patent-application, May 2007

Solar Cell Having Doped Semiconductor Heterojunction Contacts patent-application, November 2007

Solar cell patent-application, October 2007

Solar Cell Fabrication Using Extruded Dopant-Bearing Materials patent-application, June 2008

Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma patent, March 1999

Mono-silicon solar cells patent, January 2013

Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells patent-application, February 2008

Dual damascene patterned conductor layer formation method without etch stop layer
patent, September 2001

Back side contact solar cell structures and fabrication processes
patent-application, July 2007

Mono-Silicon Solar Cells
patent-application, February 2010

Method of fabricating polysilicon emitters for solar cells
patent, October 1991

Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions
patent-application, December 2009

Extrusion/dispensing systems and methods
patent-application, May 2007

Solar Cell Having Doped Semiconductor Heterojunction Contacts
patent-application, November 2007

Solar cell
patent-application, October 2007

Solar Cell Fabrication Using Extruded Dopant-Bearing Materials
patent-application, June 2008

Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma
patent, March 1999

Mono-silicon solar cells
patent, January 2013

Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells
patent-application, February 2008