Method of fabricating a back-contact solar cell and device thereof
Abstract
Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.
- Inventors:
- Issue Date:
- Research Org.:
- SunPower Corporation, San Jose, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1149917
- Patent Number(s):
- 8,790,957
- Application Number:
- 12/972,247
- Assignee:
- SunPower Corporation (San Jose, CA) GFO
- DOE Contract Number:
- FC36-07GO17043
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Li, Bo, Smith, David, and Cousins, Peter. Method of fabricating a back-contact solar cell and device thereof. United States: N. p., 2014.
Web.
Li, Bo, Smith, David, & Cousins, Peter. Method of fabricating a back-contact solar cell and device thereof. United States.
Li, Bo, Smith, David, and Cousins, Peter. Tue .
"Method of fabricating a back-contact solar cell and device thereof". United States. https://www.osti.gov/servlets/purl/1149917.
@article{osti_1149917,
title = {Method of fabricating a back-contact solar cell and device thereof},
author = {Li, Bo and Smith, David and Cousins, Peter},
abstractNote = {Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {7}
}
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Works referenced in this record:
Method of fabricating polysilicon emitters for solar cells
patent, October 1991
- Swanson, Richard; Gan, Jon-Yiew
- US Patent Document 5,057,439
Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells
patent-application, February 2008
- Teppe, Andreas; Engelhart, Peter; Muller, Jorg
- US Patent Document 11/665318; 20080035198