Method of fabricating a back-contact solar cell and device thereof

Title: Method of fabricating a back-contact solar cell and device thereof

Abstract

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Inventors:: Li, Bo; Smith, David; Cousins, Peter

Issue Date:: 2014-07-29

Research Org.:: SunPower Corporation, San Jose, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1149917

Patent Number(s):: 8790957

Application Number:: 12/972,247

Assignee:: SunPower Corporation (San Jose, CA)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/546 - Polycrystalline silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/547 - Monocrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0682 - {back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells}
H01L31/02363 - {of the semiconductor body itself, e.g. textured active layers}
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof

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DOE Contract Number:: FC36-07GO17043

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Li, Bo, Smith, David, and Cousins, Peter. Method of fabricating a back-contact solar cell and device thereof.  United States: N. p., 2014. 
        Web.

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                    Li, Bo, Smith, David, & Cousins, Peter. Method of fabricating a back-contact solar cell and device thereof.  United States.

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                    Li, Bo, Smith, David, and Cousins, Peter. Tue .  
        "Method of fabricating a back-contact solar cell and device thereof".  United States.  https://www.osti.gov/servlets/purl/1149917.

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@article{osti_1149917,

  title        = {Method of fabricating a back-contact solar cell and device thereof},

  author       = {Li, Bo and Smith, David and Cousins, Peter},

  abstractNote = {Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {7}

}

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Works referenced in this record:

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Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions
patent-application, December 2009

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patent-application, February 2010

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Similar Records

Title: Method of fabricating a back-contact solar cell and device thereof

Abstract

Citation Formats

Method of fabricating polysilicon emitters for solar cells patent, October 1991

Extrusion/dispensing systems and methods patent-application, May 2007

Back side contact solar cell structures and fabrication processes patent-application, July 2007

Solar cell patent-application, October 2007

Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells patent-application, February 2008

Solar Cell Fabrication Using Extruded Dopant-Bearing Materials patent-application, June 2008

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Mono-Silicon Solar Cells patent-application, February 2010

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patent, October 1991

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patent-application, May 2007

Back side contact solar cell structures and fabrication processes
patent-application, July 2007

Solar cell
patent-application, October 2007

Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells
patent-application, February 2008

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patent-application, June 2008

Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions
patent-application, December 2009

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