X-ray mask and method for providing same
Abstract
The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.
- Inventors:
-
- Pleasanton, CA
- Fremont, CA
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 982794
- Patent Number(s):
- 6798862
- Application Number:
- 10/262,039
- Assignee:
- Sandia National Laboratories (Livermore, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B29 - WORKING OF PLASTICS B29C - SHAPING OR JOINING OF PLASTICS
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Morales, Alfredo M, and Skala, Dawn M. X-ray mask and method for providing same. United States: N. p., 2004.
Web.
Morales, Alfredo M, & Skala, Dawn M. X-ray mask and method for providing same. United States.
Morales, Alfredo M, and Skala, Dawn M. Tue .
"X-ray mask and method for providing same". United States. https://www.osti.gov/servlets/purl/982794.
@article{osti_982794,
title = {X-ray mask and method for providing same},
author = {Morales, Alfredo M and Skala, Dawn M},
abstractNote = {The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 28 00:00:00 EDT 2004},
month = {Tue Sep 28 00:00:00 EDT 2004}
}
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