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Title: X-ray mask and method for providing same

Abstract

The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.

Inventors:
 [1];  [2]
  1. Pleasanton, CA
  2. Fremont, CA
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
874863
Patent Number(s):
6477225
Assignee:
Sandia National Laboratories (Livermore, CA)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B29 - WORKING OF PLASTICS B29C - SHAPING OR JOINING OF PLASTICS
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
x-ray; mask; method; providing; describes; fabricating; tool; achieve; pattern; features; lateral; dimension; micron; process; photoresist; standard; lithographic; transfer; trace; image; surface; silicon; wafer; exposing; developing; resist; exposed; portion; substrate; anisotropically; etched; provide; consisting; series; channels; depth-to-width; aspect; ratio; filled; depositing; metal; gold; inverse; robust; silicon substrate; silicon wafer; /378/

Citation Formats

Morales, Alfredo M, and Skala, Dawn M. X-ray mask and method for providing same. United States: N. p., 2002. Web.
Morales, Alfredo M, & Skala, Dawn M. X-ray mask and method for providing same. United States.
Morales, Alfredo M, and Skala, Dawn M. Tue . "X-ray mask and method for providing same". United States. https://www.osti.gov/servlets/purl/874863.
@article{osti_874863,
title = {X-ray mask and method for providing same},
author = {Morales, Alfredo M and Skala, Dawn M},
abstractNote = {The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

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Works referenced in this record:

X-Ray masks for very deep X-Ray lithography
journal, February 1998


High precision, low cost mask for deep x-ray lithography
journal, February 1998


Advanced silicon etching using high-density plasmas
conference, September 1995


Fabrication of intermediate mask for deep x-ray lithography
journal, February 1998


DEM technique: a new three-dimensional microfabrication technique for nonsilicon materials
conference, March 1999


Fabrication of HARM structures by deep-X-ray lithography using graphite mask technology
journal, February 2000


Mask making for synchrotron radiation lithography
journal, December 1986


Inexpensive, quickly producable X-ray mask for LIGA
journal, July 1999


Development of a low-cost x-ray mask for high-aspect-ratio MEM smart structures
conference, July 1998

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