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Title: X-ray mask and method for providing same

Abstract

The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.

Inventors:
 [1];  [2]
  1. (Pleasanton, CA)
  2. (Fremont, CA)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
874863
Patent Number(s):
6477225
Assignee:
Sandia National Laboratories (Livermore, CA) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
x-ray; mask; method; providing; describes; fabricating; tool; achieve; pattern; features; lateral; dimension; micron; process; photoresist; standard; lithographic; transfer; trace; image; surface; silicon; wafer; exposing; developing; resist; exposed; portion; substrate; anisotropically; etched; provide; consisting; series; channels; depth-to-width; aspect; ratio; filled; depositing; metal; gold; inverse; robust; silicon substrate; silicon wafer; /378/

Citation Formats

Morales, Alfredo M., and Skala, Dawn M. X-ray mask and method for providing same. United States: N. p., 2002. Web.
Morales, Alfredo M., & Skala, Dawn M. X-ray mask and method for providing same. United States.
Morales, Alfredo M., and Skala, Dawn M. Tue . "X-ray mask and method for providing same". United States. https://www.osti.gov/servlets/purl/874863.
@article{osti_874863,
title = {X-ray mask and method for providing same},
author = {Morales, Alfredo M. and Skala, Dawn M.},
abstractNote = {The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

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