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Title: Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns

Abstract

The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.

Inventors:
 [1]
  1. Fremont, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
909159
Patent Number(s):
7212282
Application Number:
10/783,520
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Hau-Riege, Stefan Peter. Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns. United States: N. p., 2007. Web.
Hau-Riege, Stefan Peter. Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns. United States.
Hau-Riege, Stefan Peter. Tue . "Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns". United States. https://www.osti.gov/servlets/purl/909159.
@article{osti_909159,
title = {Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns},
author = {Hau-Riege, Stefan Peter},
abstractNote = {The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {5}
}

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Works referenced in this record:

Phase retrieval algorithms: a comparison
journal, January 1982