Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns
Abstract
The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.
- Inventors:
-
- Fremont, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 909159
- Patent Number(s):
- 7212282
- Application Number:
- 10/783,520
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Hau-Riege, Stefan Peter. Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns. United States: N. p., 2007.
Web.
Hau-Riege, Stefan Peter. Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns. United States.
Hau-Riege, Stefan Peter. Tue .
"Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns". United States. https://www.osti.gov/servlets/purl/909159.
@article{osti_909159,
title = {Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns},
author = {Hau-Riege, Stefan Peter},
abstractNote = {The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {5}
}
Works referenced in this record:
Image reconstruction from electron and X-ray diffraction patterns using iterative algorithms: experiment and simulation
journal, February 2002
- Weierstall, U.; Chen, Q.; Spence, J. C. H.
- Ultramicroscopy, Vol. 90, Issue 2-3
Phase retrieval algorithms: a comparison
journal, January 1982
- Fienup, J. R.
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