Method for measuring and controlling beam current in ion beam processing
Abstract
A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0.1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.
- Inventors:
-
- Livermore, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 921308
- Patent Number(s):
- 6554968
- Application Number:
- 09/670,921
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Kearney, Patrick A, and Burkhart, Scott C. Method for measuring and controlling beam current in ion beam processing. United States: N. p., 2003.
Web.
Kearney, Patrick A, & Burkhart, Scott C. Method for measuring and controlling beam current in ion beam processing. United States.
Kearney, Patrick A, and Burkhart, Scott C. Tue .
"Method for measuring and controlling beam current in ion beam processing". United States. https://www.osti.gov/servlets/purl/921308.
@article{osti_921308,
title = {Method for measuring and controlling beam current in ion beam processing},
author = {Kearney, Patrick A and Burkhart, Scott C},
abstractNote = {A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0.1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 29 00:00:00 EDT 2003},
month = {Tue Apr 29 00:00:00 EDT 2003}
}
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