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Title: Method for measuring and controlling beam current in ion beam processing

Abstract

A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0.1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.

Inventors:
 [1];  [1]
  1. Livermore, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
921308
Patent Number(s):
6554968
Application Number:
09/670,921
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Kearney, Patrick A, and Burkhart, Scott C. Method for measuring and controlling beam current in ion beam processing. United States: N. p., 2003. Web.
Kearney, Patrick A, & Burkhart, Scott C. Method for measuring and controlling beam current in ion beam processing. United States.
Kearney, Patrick A, and Burkhart, Scott C. Tue . "Method for measuring and controlling beam current in ion beam processing". United States. https://www.osti.gov/servlets/purl/921308.
@article{osti_921308,
title = {Method for measuring and controlling beam current in ion beam processing},
author = {Kearney, Patrick A and Burkhart, Scott C},
abstractNote = {A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0.1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {4}
}

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