skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ion-beam apparatus and method for analyzing and controlling integrated circuits

Abstract

An ion-beam apparatus and method for analyzing and controlling integrated circuits. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal.

Inventors:
 [1];  [2]
  1. Albuquerque, NM
  2. Placitas, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
872014
Patent Number(s):
5844416
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
ion-beam; apparatus; method; analyzing; controlling; integrated; circuits; comprises; stage; holding; ics; source; means; producing; focused; beam; beam-directing; directing; irradiate; predetermined; portion; sufficient; time; provide; ion-beam-generated; electrical; input; signal; element; applications; failure; analysis; developmental; permit; alteration; control; programming; logic; device; parameters; separate; combination; applied; stimulus; preferred; embodiments; including; secondary; particle; detector; electron; floodgun; imaging; electrons; allow; partial; removal; erasure; beam apparatus; predetermined portion; electrical input; source means; preferred embodiments; apparatus comprises; preferred embodiment; integrated circuits; input signal; integrated circuit; sufficient time; particle detector; failure analysis; apparatus comprise; directing means; applied electric; ion-beam apparatus; secondary particle; controlling integrated; /324/

Citation Formats

Campbell, Ann N, and Soden, Jerry M. Ion-beam apparatus and method for analyzing and controlling integrated circuits. United States: N. p., 1998. Web.
Campbell, Ann N, & Soden, Jerry M. Ion-beam apparatus and method for analyzing and controlling integrated circuits. United States.
Campbell, Ann N, and Soden, Jerry M. Thu . "Ion-beam apparatus and method for analyzing and controlling integrated circuits". United States. https://www.osti.gov/servlets/purl/872014.
@article{osti_872014,
title = {Ion-beam apparatus and method for analyzing and controlling integrated circuits},
author = {Campbell, Ann N and Soden, Jerry M},
abstractNote = {An ion-beam apparatus and method for analyzing and controlling integrated circuits. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}

Patent:

Save / Share:

Works referenced in this record:

Application of FIB for In-Process Mapping of Failed Capacitors of High-Mega-Bit DRAM
conference, January 1990


IC failure analysis: techniques and tools for quality reliability improvement
journal, May 1993


Novel failure analysis techniques using photon probing with a scanning optical microscope
conference, January 1994


Applications of focused ion beams in microelectronics production, design and development
journal, February 1995


Charge Induced Instability in 709 Operational Amplifiers
conference, April 1972


Focused electron and ion beam repair strategies for wafer-scale interconnections in thin film packaging
journal, December 1988


Laser scanning of MOS IC's reveals internal logic states nondestructively
journal, January 1976


Review on kinetic ion-electron emission from solid metallic targets
journal, March 1982