Plasma formed ion beam projection lithography system
Abstract
A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.
- Inventors:
-
- Hercules, CA
- Berkeley, CA
- San Jose, CA
- Greenbrae, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 874902
- Patent Number(s):
- 6486480
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- plasma; formed; beam; projection; lithography; plasma-formed; ion-beam; ipl; eliminates; acceleration; stage; source; stencil; mask; conventional; thicker; forming; extraction; electrode; positioned; entire; illuminated; uniformly; extracted; passes; reduction; resist; coated; wafer; energy; 30; pass; minimizing; heating; scattering; sputtering; beam passes; plasma formed; /250/
Citation Formats
Leung, Ka-Ngo, Lee, Yung-Hee Yvette, Ngo, Vinh, and Zahir, Nastaran. Plasma formed ion beam projection lithography system. United States: N. p., 2002.
Web.
Leung, Ka-Ngo, Lee, Yung-Hee Yvette, Ngo, Vinh, & Zahir, Nastaran. Plasma formed ion beam projection lithography system. United States.
Leung, Ka-Ngo, Lee, Yung-Hee Yvette, Ngo, Vinh, and Zahir, Nastaran. Tue .
"Plasma formed ion beam projection lithography system". United States. https://www.osti.gov/servlets/purl/874902.
@article{osti_874902,
title = {Plasma formed ion beam projection lithography system},
author = {Leung, Ka-Ngo and Lee, Yung-Hee Yvette and Ngo, Vinh and Zahir, Nastaran},
abstractNote = {A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2002},
month = {Tue Jan 01 00:00:00 EST 2002}
}
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