Maskless micro-ion-beam reduction lithography system
Abstract
A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175341
- Patent Number(s):
- 6888146
- Application Number:
- 09/289,332
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Leung, Ka-Ngo, Barletta, William A., Patterson, David O., and Gough, Richard A. Maskless micro-ion-beam reduction lithography system. United States: N. p., 2005.
Web.
Leung, Ka-Ngo, Barletta, William A., Patterson, David O., & Gough, Richard A. Maskless micro-ion-beam reduction lithography system. United States.
Leung, Ka-Ngo, Barletta, William A., Patterson, David O., and Gough, Richard A. Tue .
"Maskless micro-ion-beam reduction lithography system". United States. https://www.osti.gov/servlets/purl/1175341.
@article{osti_1175341,
title = {Maskless micro-ion-beam reduction lithography system},
author = {Leung, Ka-Ngo and Barletta, William A. and Patterson, David O. and Gough, Richard A.},
abstractNote = {A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {5}
}
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Works referenced in this record:
A neutron tube with constant output (1010 n/sec) for activation analysis and reactor applications
journal, March 1965
- Bounden, J. E.; Lomer, P. D.; Wood, J. D. L. H.
- Nuclear Instruments and Methods, Vol. 33, Issue 2