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Title: Maskless micro-ion-beam reduction lithography system

Abstract

A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.

Inventors:
; ; ;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175341
Patent Number(s):
6888146
Application Number:
09/289,332
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Leung, Ka-Ngo, Barletta, William A., Patterson, David O., and Gough, Richard A.. Maskless micro-ion-beam reduction lithography system. United States: N. p., 2005. Web.
Leung, Ka-Ngo, Barletta, William A., Patterson, David O., & Gough, Richard A.. Maskless micro-ion-beam reduction lithography system. United States.
Leung, Ka-Ngo, Barletta, William A., Patterson, David O., and Gough, Richard A.. Tue . "Maskless micro-ion-beam reduction lithography system". United States. https://www.osti.gov/servlets/purl/1175341.
@article{osti_1175341,
title = {Maskless micro-ion-beam reduction lithography system},
author = {Leung, Ka-Ngo and Barletta, William A. and Patterson, David O. and Gough, Richard A.},
abstractNote = {A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {5}
}

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Works referenced in this record:

A neutron tube with constant output (1010 n/sec) for activation analysis and reactor applications
journal, March 1965