Ion beam lithography system

Leung, Ka-Ngo

Title: Ion beam lithography system

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Abstract

A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

Inventors:: Leung, Ka-Ngo

Issue Date:: 2005-08-02

Research Org.:: Univ. of California, Oakland, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1175448

Patent Number(s):: 6924493

Application Number:: 09/641,467

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J2237/1205 - Microlenses
H01J37/3174 - {Particle-beam lithography, e.g. electron beam lithography}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y40/00 - Manufacture or treatment of nanostructures

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J2237/31774 - Multi-beam
H01J2237/3175 - Lithography
H01J2237/31755 - using ion beams
H01J2237/0435 - Multi-aperture
H01J37/08 - Ion sources

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J2237/31788 - through mask
H01J2237/21 - Focus adjustment
H01J37/045 - {Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge}

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DOE Contract Number:: AC03-76SF00098

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 47 OTHER INSTRUMENTATION

Citation Formats


                    Leung, Ka-Ngo. Ion beam lithography system.  United States: N. p., 2005. 
        Web.

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                    Leung, Ka-Ngo. Ion beam lithography system.  United States.

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                    Leung, Ka-Ngo. Tue .  
        "Ion beam lithography system".  United States.  https://www.osti.gov/servlets/purl/1175448.

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@article{osti_1175448,

  title        = {Ion beam lithography system},

  author       = {Leung, Ka-Ngo},

  abstractNote = {A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2005},

  month        = {8}

}

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