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Title: Plasma formed ion beam projection lithography system

Abstract

A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

Inventors:
 [1];  [2];  [3];  [4]
  1. (Hercules, CA)
  2. (Berkeley, CA)
  3. (San Jose, CA)
  4. (Greenbrae, CA)
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
OSTI Identifier:
874902
Patent Number(s):
6486480
Assignee:
The Regents of the University of California (Oakland, CA) LBNL
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
plasma; formed; beam; projection; lithography; plasma-formed; ion-beam; ipl; eliminates; acceleration; stage; source; stencil; mask; conventional; thicker; forming; extraction; electrode; positioned; entire; illuminated; uniformly; extracted; passes; reduction; resist; coated; wafer; energy; 30; pass; minimizing; heating; scattering; sputtering; beam passes; plasma formed; /250/

Citation Formats

Leung, Ka-Ngo, Lee, Yung-Hee Yvette, Ngo, Vinh, and Zahir, Nastaran. Plasma formed ion beam projection lithography system. United States: N. p., 2002. Web.
Leung, Ka-Ngo, Lee, Yung-Hee Yvette, Ngo, Vinh, & Zahir, Nastaran. Plasma formed ion beam projection lithography system. United States.
Leung, Ka-Ngo, Lee, Yung-Hee Yvette, Ngo, Vinh, and Zahir, Nastaran. Tue . "Plasma formed ion beam projection lithography system". United States. https://www.osti.gov/servlets/purl/874902.
@article{osti_874902,
title = {Plasma formed ion beam projection lithography system},
author = {Leung, Ka-Ngo and Lee, Yung-Hee Yvette and Ngo, Vinh and Zahir, Nastaran},
abstractNote = {A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

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