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Title: Method for extreme ultraviolet lithography

Abstract

A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

Inventors:
 [1];  [1]
  1. (Livermore, CA)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
872784
Patent Number(s):
6007963
Assignee:
Sandia Corporation (Livermore, CA) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; extreme; ultraviolet; lithography; producing; patterned; array; features; particular; gate; apertures; size; range; 4-0; 05; projection; euv; radiation; energy; laser; beam; vaporize; target; material; produce; plasma; produces; characteristic; wavelength; 13; nm; lithographic; applications; transmitted; series; reflective; mirrors; mask; bears; pattern; printed; demagnified; focused; means; appropriate; optics; single; exposure; substrate; coated; photoresists; designed; transparent; satisfy; conventional; processing; methods; processing methods; processing method; reflective mirrors; size range; projection lithography; ultraviolet lithography; ultraviolet radiation; laser beam; extreme ultraviolet; target material; substrate coated; euv radiation; energy laser; single exposure; satisfy conventional; appropriate optics; produces extreme; photoresists designed; lithographic applications; patterned array; conventional processing; characteristic wavelength; mask pattern; reflective mirror; gate apertures; focused mask; conventional process; demagnified focused; target mater; /430/

Citation Formats

Felter, T. E., and Kubiak, Glenn D. Method for extreme ultraviolet lithography. United States: N. p., 1999. Web.
Felter, T. E., & Kubiak, Glenn D. Method for extreme ultraviolet lithography. United States.
Felter, T. E., and Kubiak, Glenn D. Fri . "Method for extreme ultraviolet lithography". United States. https://www.osti.gov/servlets/purl/872784.
@article{osti_872784,
title = {Method for extreme ultraviolet lithography},
author = {Felter, T. E. and Kubiak, Glenn D.},
abstractNote = {A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

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