Method for extreme ultraviolet lithography
Abstract
A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.
- Inventors:
-
- 727 Clara St., Livermore, Alameda County, CA 94550
- 475 Maple St., Livermore, Alameda County, CA 94550
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873452
- Patent Number(s):
- 6162577
- Assignee:
- Felter, T. E. (727 Clara St., Livermore, Alameda County, CA 94550);Kubiak, G. D. (475 Maple St., Livermore, Alameda County, CA 94550)
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; extreme; ultraviolet; lithography; producing; patterned; array; features; particular; gate; apertures; size; range; 4-0; 05; projection; euv; radiation; energy; laser; beam; vaporize; target; material; produce; plasma; produces; characteristic; wavelength; 13; nm; lithographic; applications; transmitted; series; reflective; mirrors; mask; bears; pattern; printed; demagnified; focused; means; appropriate; optics; single; exposure; substrate; coated; photoresists; designed; transparent; satisfy; conventional; processing; methods; processing methods; processing method; reflective mirrors; size range; projection lithography; ultraviolet lithography; ultraviolet radiation; laser beam; extreme ultraviolet; target material; substrate coated; euv radiation; energy laser; single exposure; satisfy conventional; appropriate optics; produces extreme; photoresists designed; lithographic applications; patterned array; conventional processing; characteristic wavelength; mask pattern; reflective mirror; gate apertures; focused mask; conventional process; demagnified focused; target mater; /430/
Citation Formats
Felter, T E, and Kubiak, G D. Method for extreme ultraviolet lithography. United States: N. p., 2000.
Web.
Felter, T E, & Kubiak, G D. Method for extreme ultraviolet lithography. United States.
Felter, T E, and Kubiak, G D. Sat .
"Method for extreme ultraviolet lithography". United States. https://www.osti.gov/servlets/purl/873452.
@article{osti_873452,
title = {Method for extreme ultraviolet lithography},
author = {Felter, T E and Kubiak, G D},
abstractNote = {A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2000},
month = {Sat Jan 01 00:00:00 EST 2000}
}
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Works referenced in this record:
XUV resist characterization: studies with a laser plasma source
conference, February 1991
- Kubiak, Glenn D.
- San Dieg - DL Tentative, SPIE Proceedings
Fabrication of 0.4 μm grid apertures for field-emission array cathodes
journal, April 1993
- Peters, D.; Bartsch, W.; Stephani, D.
- Microelectronic Engineering, Vol. 21, Issue 1-4
Soft x-ray resist characterization: studies with a laser plasma x-ray source
conference, May 1990
- Kubiak, Glenn D.; Outka, Duane A.; Zeigler, John M.
- Microlithography '90, 4-9 Mar, San Jose, SPIE Proceedings