Process for forming silicon carbide films and microcomponents

Hamza, Alex V; Balooch, Mehdi; Moalem, Mehran

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Title: Process for forming silicon carbide films and microcomponents

Abstract

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Inventors:

Hamza, Alex V ^[1]; Balooch, Mehdi ^[2]; Moalem, Mehran ^[2]

Livermore, CA
Berkeley, CA

Issue Date:: Fri Jan 01 00:00:00 EST 1999

Research Org.:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

OSTI Identifier:: 872105

Patent Number(s):: 5861346

Assignee:: Regents of University of California (Oakland, CA)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B23/02 - Epitaxial-layer growth
C30B25/02 - Epitaxial-layer growth
C30B29/36 - Carbides

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/931 - Silicon carbide semiconductor

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: process; forming; silicon; carbide; films; microcomponents; grown; substrates; surface; temperatures; 900; 1700; via; 60; precursors; hydrogen-free; environment; selective; crystalline; growth; achieved; patterned; silicon-silicon; oxide; samples; sic; produced; reaction; probability; negligible; dioxide; 1250; silicon substrates; silicon carbide; silicon substrate; silicon oxide; crystalline silicon; silicon dioxide; surface temperature; surface temperatures; selective crystalline; patterned silicon; forming silicon; carbide films; /438/117/427/

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                    Hamza, Alex V, Balooch, Mehdi, and Moalem, Mehran. Process for forming silicon carbide films and microcomponents.  United States: N. p., 1999. 
        Web.

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                    Hamza, Alex V, Balooch, Mehdi, & Moalem, Mehran. Process for forming silicon carbide films and microcomponents.  United States.

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                    Hamza, Alex V, Balooch, Mehdi, and Moalem, Mehran. Fri .  
        "Process for forming silicon carbide films and microcomponents".  United States.  https://www.osti.gov/servlets/purl/872105.

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@article{osti_872105,

  title        = {Process for forming silicon carbide films and microcomponents},

  author       = {Hamza, Alex V and Balooch, Mehdi and Moalem, Mehran},

  abstractNote = {Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Fri Jan 01 00:00:00 EST 1999},

  month        = {Fri Jan 01 00:00:00 EST 1999}

}

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Works referenced in this record:

Fullerene (C60) adsorption on Si surfaces
journal, April 1993

Sakurai, T.; Wang, X. D.; Hashizume, T.
Applied Surface Science, Vol. 67, Issue 1-4
https://doi.org/10.1016/0169-4332(93)90326-7

Growth of silicon carbide films via C60 precursors
journal, October 1994

Hamza, A. V.; Balooch, M.; Moalem, M.
Surface Science, Vol. 317, Issue 3
https://doi.org/10.1016/0039-6028(94)90279-8

Fabrication of SiC Films on Si(100) using a C60 molecular source
journal, June 1994

Workman, R.; Chen, D.; Sarid, D.
Electronics Letters, Vol. 30, Issue 12
https://doi.org/10.1049/el:19940683

C58 production from dissociation of C60 by scattering from silica and highly oriented pyrolytic graphite
journal, September 1994

Hamza, A. V.; Balooch, M.; Moalem, M.
Chemical Physics Letters, Vol. 228, Issue 1-3
https://doi.org/10.1016/0009-2614(94)00919-8

Synthesis of epitaxial β‐SiC by C ₆₀ carbonization of silicon
journal, August 1995

Henke, S.; Stritzker, B.; Rauschenbach, B.
Journal of Applied Physics, Vol. 78, Issue 3
https://doi.org/10.1063/1.360184

Surface mobility of C ₆₀ on SiO ₂
journal, September 1993

Moalem, M.; Balooch, M.; Hamza, A. V.
The Journal of Chemical Physics, Vol. 99, Issue 6
https://doi.org/10.1063/1.466032

Sapphire (112¯0) surface: Structure and laser-induced desorption of aluminum
journal, March 1992

Schildbach, M. A.; Hamza, A. V.
Physical Review B, Vol. 45, Issue 11
https://doi.org/10.1103/PhysRevB.45.6197

The chemisorption of C60 on Si(100)-(2 × 1)
journal, January 1993

Hamza, A. V.; Balooch, M.
Chemical Physics Letters, Vol. 201, Issue 5-6
https://doi.org/10.1016/0009-2614(93)85092-3

Observation of C ₆₀ cage opening on Si(111)‐(7×7)
journal, July 1993

Balooch, M.; Hamza, A. V.
Applied Physics Letters, Vol. 63, Issue 2
https://doi.org/10.1063/1.110382

Double domain solid $C_{60}$ on Si(111)7×7
journal, March 1993

Xu, Hang; Chen, D. M.; Creager, W. N.
Physical Review Letters, Vol. 70, Issue 12
https://doi.org/10.1103/PhysRevLett.70.1850

SiC microcomponents via reaction of C60 with silicon
journal, November 1994

Balooch, M.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 12, Issue 6
https://doi.org/10.1116/1.587503

Temperature effects of adsorption of $C_{60}$ molecules on Si(111)-(7×7) surfaces
journal, March 1994

Chen, Dong; Sarid, Dror
Physical Review B, Vol. 49, Issue 11
https://doi.org/10.1103/PhysRevB.49.7612

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Similar Records

Title: Process for forming silicon carbide films and microcomponents

Abstract

Citation Formats

Fullerene (C60) adsorption on Si surfaces journal, April 1993

Growth of silicon carbide films via C60 precursors journal, October 1994

Fabrication of SiC Films on Si(100) using a C60 molecular source journal, June 1994

C58 production from dissociation of C60 by scattering from silica and highly oriented pyrolytic graphite journal, September 1994

Synthesis of epitaxial β‐SiC by C 60 carbonization of silicon journal, August 1995

Surface mobility of C 60 on SiO 2 journal, September 1993

Sapphire (112¯0) surface: Structure and laser-induced desorption of aluminum journal, March 1992

The chemisorption of C60 on Si(100)-(2 × 1) journal, January 1993

Observation of C 60 cage opening on Si(111)‐(7×7) journal, July 1993

Double domain solid C 60 on Si(111)7×7 journal, March 1993

SiC microcomponents via reaction of C60 with silicon journal, November 1994

Temperature effects of adsorption of C 60 molecules on Si(111)-(7×7) surfaces journal, March 1994

Fullerene (C60) adsorption on Si surfaces
journal, April 1993

Growth of silicon carbide films via C60 precursors
journal, October 1994

Fabrication of SiC Films on Si(100) using a C60 molecular source
journal, June 1994

C58 production from dissociation of C60 by scattering from silica and highly oriented pyrolytic graphite
journal, September 1994

Synthesis of epitaxial β‐SiC by C ₆₀ carbonization of silicon
journal, August 1995

Surface mobility of C ₆₀ on SiO ₂
journal, September 1993

Sapphire (112¯0) surface: Structure and laser-induced desorption of aluminum
journal, March 1992

The chemisorption of C60 on Si(100)-(2 × 1)
journal, January 1993

Observation of C ₆₀ cage opening on Si(111)‐(7×7)
journal, July 1993

Double domain solid $C_{60}$ on Si(111)7×7
journal, March 1993

SiC microcomponents via reaction of C60 with silicon
journal, November 1994

Temperature effects of adsorption of $C_{60}$ molecules on Si(111)-(7×7) surfaces
journal, March 1994