Process for forming silicon carbide films and microcomponents
Abstract
Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 321303
- Patent Number(s):
- 5861346
- Application Number:
- PAN: 8-507,916
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 19 Jan 1999
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SILICON CARBIDES; CRYSTAL GROWTH; MICROELECTRONIC CIRCUITS; FABRICATION; SUBSTRATES
Citation Formats
Hamza, A V, Balooch, M, and Moalem, M. Process for forming silicon carbide films and microcomponents. United States: N. p., 1999.
Web.
Hamza, A V, Balooch, M, & Moalem, M. Process for forming silicon carbide films and microcomponents. United States.
Hamza, A V, Balooch, M, and Moalem, M. Tue .
"Process for forming silicon carbide films and microcomponents". United States.
@article{osti_321303,
title = {Process for forming silicon carbide films and microcomponents},
author = {Hamza, A V and Balooch, M and Moalem, M},
abstractNote = {Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}
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