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Title: Process for forming silicon carbide films and microcomponents

Abstract

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

Inventors:
; ;
Issue Date:
Research Org.:
Univ. of California (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
321303
Patent Number(s):
5861346
Application Number:
PAN: 8-507,916
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 19 Jan 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SILICON CARBIDES; CRYSTAL GROWTH; MICROELECTRONIC CIRCUITS; FABRICATION; SUBSTRATES

Citation Formats

Hamza, A V, Balooch, M, and Moalem, M. Process for forming silicon carbide films and microcomponents. United States: N. p., 1999. Web.
Hamza, A V, Balooch, M, & Moalem, M. Process for forming silicon carbide films and microcomponents. United States.
Hamza, A V, Balooch, M, and Moalem, M. Tue . "Process for forming silicon carbide films and microcomponents". United States.
@article{osti_321303,
title = {Process for forming silicon carbide films and microcomponents},
author = {Hamza, A V and Balooch, M and Moalem, M},
abstractNote = {Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}