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Title: Methods of forming silicon carbide by spark plasma sintering

Abstract

A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50.degree. C./min and about 200.degree. C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.

Inventors:
; ; ;
Issue Date:
Research Org.:
Idaho National Laboratory (INL), Idaho Falls, ID (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1506948
Patent Number(s):
10207956
Application Number:
15/195,313
Assignee:
Battelle Energy Alliance, LLC (Idaho Falls, ID)
Patent Classifications (CPCs):
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
DOE Contract Number:  
AC07-05ID14517
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Jun 28
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Methods of forming silicon carbide by spark plasma sintering. United States: N. p., 2019. Web.
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., & Bakas, Michael P. Methods of forming silicon carbide by spark plasma sintering. United States.
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Tue . "Methods of forming silicon carbide by spark plasma sintering". United States. https://www.osti.gov/servlets/purl/1506948.
@article{osti_1506948,
title = {Methods of forming silicon carbide by spark plasma sintering},
author = {Chu, Henry S. and O'Brien, Robert C. and Cook, Steven K. and Bakas, Michael P.},
abstractNote = {A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50.degree. C./min and about 200.degree. C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {2}
}

Works referenced in this record:

Boron carbide sintered body and protective member
patent, July 2009


Method for making sintered cubic halide scintillator material
patent, February 2011


Spark Plasma Sintered Polycrystalline Diamond
patent-application, July 2018


Method of forming silicon carbide and silicon nitride composite
patent, April 2006


Lightweight armor system
patent, February 2013


Field assisted sintering of SiC using extreme heating rates
journal, February 2011


Methods of Flash Sintering
patent-application, October 2014


Nanocomposites of silicon nitride, silicon carbide, and boron nitride
patent, July 2006


Electric-Discharge Sintering
patent, March 1966


Methods of Flash Sintering
patent-application, April 2013


Electric Current Activation of Sintering: A Review of the Pulsed Electric Current Sintering Process: Electric Current Activation of Sintering
journal, November 2010


Dissipative structures and related methods
patent, November 2013


Method of forming aluminum oxynitride material and bodies formed by such methods
patent, November 2010


Flash Spark Plasma Sintering (FSPS) of α and β SiC
journal, February 2016