U.S. Department of EnergyOffice of Scientific and Technical Information
Methods of forming silicon carbide by spark plasma sintering
Abstract
A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50.degree. C./min and about 200.degree. C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
- Inventors:
- Publication Date:
- Research Org.:
- Idaho National Laboratory (INL), Idaho Falls, ID (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1506948
- Patent Number(s):
- 10,207,956
- Application Number:
- 15/195,313
- Assignee:
- Battelle Energy Alliance, LLC (Idaho Falls, ID)
- DOE Contract Number:
- AC07-05ID14517
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Jun 28
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Methods of forming silicon carbide by spark plasma sintering. United States: N. p., 2019.
Web.
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., & Bakas, Michael P. Methods of forming silicon carbide by spark plasma sintering. United States.
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. 2019.
"Methods of forming silicon carbide by spark plasma sintering". United States. https://www.osti.gov/servlets/purl/1506948.
@article{osti_1506948,
title = {Methods of forming silicon carbide by spark plasma sintering},
author = {Chu, Henry S. and O'Brien, Robert C. and Cook, Steven K. and Bakas, Michael P.},
abstractNote = {A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50.degree. C./min and about 200.degree. C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.},
doi = {},
url = {https://www.osti.gov/biblio/1506948},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 19 00:00:00 EST 2019},
month = {Tue Feb 19 00:00:00 EST 2019}
}
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