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Title: Methods of forming articles including silicon carbide by spark plasma sintering

Abstract

A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.

Inventors:
; ; ;
Issue Date:
Research Org.:
Idaho National Lab. (INL), Idaho Falls, ID (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568643
Patent Number(s):
10,364,191
Application Number:
16/175,635
Assignee:
Battelle Energy Alliance, LLC (Idaho Falls, ID)
DOE Contract Number:  
AC07-05ID14517
Resource Type:
Patent
Resource Relation:
Patent File Date: 10/30/2018
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Methods of forming articles including silicon carbide by spark plasma sintering. United States: N. p., 2019. Web.
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., & Bakas, Michael P. Methods of forming articles including silicon carbide by spark plasma sintering. United States.
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Tue . "Methods of forming articles including silicon carbide by spark plasma sintering". United States. https://www.osti.gov/servlets/purl/1568643.
@article{osti_1568643,
title = {Methods of forming articles including silicon carbide by spark plasma sintering},
author = {Chu, Henry S. and O'Brien, Robert C. and Cook, Steven K. and Bakas, Michael P.},
abstractNote = {A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {7}
}

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Works referenced in this record:

Lightweight armor system
patent, February 2013


Nanocomposites of silicon nitride, silicon carbide, and boron nitride
patent, July 2006


Method for making sintered cubic halide scintillator material
patent, February 2011


Method of forming silicon carbide and silicon nitride composite
patent, April 2006


Boron carbide sintered body and protective member
patent, July 2009


Method of forming aluminum oxynitride material and bodies formed by such methods
patent, November 2010


Dissipative structures and related methods
patent, November 2013