Methods of forming articles including silicon carbide by spark plasma sintering

Title: Methods of forming articles including silicon carbide by spark plasma sintering

Abstract

A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.

Inventors:: Chu, Henry S.; O'Brien, Robert C.; Cook, Steven K.; Bakas, Michael P.

Issue Date:: 2019-07-30

Research Org.:: Idaho National Lab. (INL), Idaho Falls, ID (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1568643

Patent Number(s):: 10,364,191

Application Number:: 16/175,635

Assignee:: Battelle Energy Alliance, LLC (Idaho Falls, ID)

DOE Contract Number:: AC07-05ID14517

Resource Type:: Patent

Resource Relation:: Patent File Date: 10/30/2018

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Methods of forming articles including silicon carbide by spark plasma sintering.  United States: N. p., 2019. 
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                    Chu, Henry S., O'Brien, Robert C., Cook, Steven K., & Bakas, Michael P. Methods of forming articles including silicon carbide by spark plasma sintering.  United States.

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                    Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Tue .  
        "Methods of forming articles including silicon carbide by spark plasma sintering".  United States.  https://www.osti.gov/servlets/purl/1568643.

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@article{osti_1568643,

  title        = {Methods of forming articles including silicon carbide by spark plasma sintering},

  author       = {Chu, Henry S. and O'Brien, Robert C. and Cook, Steven K. and Bakas, Michael P.},

  abstractNote = {A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {7}

}

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Works referenced in this record:

Lightweight armor system
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Method of forming aluminum oxynitride material and bodies formed by such methods
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Title: Methods of forming articles including silicon carbide by spark plasma sintering

Abstract

Citation Formats

Lightweight armor system patent, February 2013

Nanocomposites of silicon nitride, silicon carbide, and boron nitride patent, July 2006

Monolithic, fully dense silicon carbide material, method of manufacturing and end uses patent, October 1994

Method for making sintered cubic halide scintillator material patent, February 2011

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Dissipative structures and related methods patent, November 2013

Lightweight armor system
patent, February 2013

Nanocomposites of silicon nitride, silicon carbide, and boron nitride
patent, July 2006

Monolithic, fully dense silicon carbide material, method of manufacturing and end uses
patent, October 1994

Method for making sintered cubic halide scintillator material
patent, February 2011

Method of forming silicon carbide and silicon nitride composite
patent, April 2006

Boron carbide sintered body and protective member
patent, July 2009

Method of forming aluminum oxynitride material and bodies formed by such methods
patent, November 2010

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patent, November 2013