Methods of forming articles including silicon carbide by spark plasma sintering

Chu, Henry S.; O'Brien, Robert C.; Cook, Steven K.; Bakas, Michael P.

Title: Methods of forming articles including silicon carbide by spark plasma sintering

Abstract

A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.

Inventors:: Chu, Henry S.; O'Brien, Robert C.; Cook, Steven K.; Bakas, Michael P.

Issue Date:: 2019-07-30

Research Org.:: Idaho National Lab. (INL), Idaho Falls, ID (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1568643

Patent Number(s):: 10364191

Application Number:: 16/175,635

Assignee:: Battelle Energy Alliance, LLC (Idaho Falls, ID)

Patent Classifications (CPCs):: C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

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C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B2235/767 - Hexagonal symmetry, e.g. beta-Si3N4, beta-Sialon, alpha-SiC or hexa-ferrites
C04B2235/6565 - Cooling rate
C04B2235/77 - Density
C04B2235/6567 - Treatment time
C04B2235/666 - Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
C04B2235/6562 - Heating rate
C04B35/575 - obtained by pressure sintering

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DOE Contract Number:: AC07-05ID14517

Resource Type:: Patent

Resource Relation:: Patent File Date: 10/30/2018

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Methods of forming articles including silicon carbide by spark plasma sintering.  United States: N. p., 2019. 
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                    Chu, Henry S., O'Brien, Robert C., Cook, Steven K., & Bakas, Michael P. Methods of forming articles including silicon carbide by spark plasma sintering.  United States.

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                    Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Tue .  
        "Methods of forming articles including silicon carbide by spark plasma sintering".  United States.  https://www.osti.gov/servlets/purl/1568643.

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@article{osti_1568643,

  title        = {Methods of forming articles including silicon carbide by spark plasma sintering},

  author       = {Chu, Henry S. and O'Brien, Robert C. and Cook, Steven K. and Bakas, Michael P.},

  abstractNote = {A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {7}

}

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Title: Methods of forming articles including silicon carbide by spark plasma sintering

Abstract

Citation Formats

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