Methods of forming articles including silicon carbide by spark plasma sintering
Abstract
A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
- Inventors:
- Issue Date:
- Research Org.:
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568643
- Patent Number(s):
- 10364191
- Application Number:
- 16/175,635
- Assignee:
- Battelle Energy Alliance, LLC (Idaho Falls, ID)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
- DOE Contract Number:
- AC07-05ID14517
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 10/30/2018
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Methods of forming articles including silicon carbide by spark plasma sintering. United States: N. p., 2019.
Web.
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., & Bakas, Michael P. Methods of forming articles including silicon carbide by spark plasma sintering. United States.
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Tue .
"Methods of forming articles including silicon carbide by spark plasma sintering". United States. https://www.osti.gov/servlets/purl/1568643.
@article{osti_1568643,
title = {Methods of forming articles including silicon carbide by spark plasma sintering},
author = {Chu, Henry S. and O'Brien, Robert C. and Cook, Steven K. and Bakas, Michael P.},
abstractNote = {A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {7}
}
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