DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Methods of forming articles including silicon carbide by spark plasma sintering

Abstract

A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.

Inventors:
; ; ;
Issue Date:
Research Org.:
Idaho National Laboratory (INL), Idaho Falls, ID (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568643
Patent Number(s):
10364191
Application Number:
16/175,635
Assignee:
Battelle Energy Alliance, LLC (Idaho Falls, ID)
Patent Classifications (CPCs):
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
DOE Contract Number:  
AC07-05ID14517
Resource Type:
Patent
Resource Relation:
Patent File Date: 10/30/2018
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Methods of forming articles including silicon carbide by spark plasma sintering. United States: N. p., 2019. Web.
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., & Bakas, Michael P. Methods of forming articles including silicon carbide by spark plasma sintering. United States.
Chu, Henry S., O'Brien, Robert C., Cook, Steven K., and Bakas, Michael P. Tue . "Methods of forming articles including silicon carbide by spark plasma sintering". United States. https://www.osti.gov/servlets/purl/1568643.
@article{osti_1568643,
title = {Methods of forming articles including silicon carbide by spark plasma sintering},
author = {Chu, Henry S. and O'Brien, Robert C. and Cook, Steven K. and Bakas, Michael P.},
abstractNote = {A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {7}
}

Works referenced in this record:

Lightweight armor system
patent, February 2013


Spark Plasma Sintered Polycrystalline Diamond
patent-application, July 2018


Nanocomposites of silicon nitride, silicon carbide, and boron nitride
patent, July 2006


Method for making sintered cubic halide scintillator material
patent, February 2011


Method of forming silicon carbide and silicon nitride composite
patent, April 2006


Methods of Flash Sintering
patent-application, October 2014


Boron carbide sintered body and protective member
patent, July 2009


Methods of Flash Sintering
patent-application, April 2013


Process for Production of Graphene/Silicon Carbide Ceramic Composites
patent-application, September 2015


Method of forming aluminum oxynitride material and bodies formed by such methods
patent, November 2010


Electric-Discharge Sintering
patent, March 1966


Dissipative structures and related methods
patent, November 2013