Substrate for thin silicon solar cells
Abstract
A substrate for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3.times.10.sup.-3 ohm-cm.
- Inventors:
-
- Evergreen, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 871736
- Patent Number(s):
- 5785769
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- substrate; silicon; solar; cells; photovoltaic; device; base; photosensitive; material; grown; comprises; alloy; boron; range; atomic; resistivity; times; 10; -3; ohm-cm; substrate comprises; solar cell; solar cells; photovoltaic device; silicon solar; sensitive material; photosensitive material; /136/148/
Citation Formats
Ciszek, Theodore F. Substrate for thin silicon solar cells. United States: N. p., 1998.
Web.
Ciszek, Theodore F. Substrate for thin silicon solar cells. United States.
Ciszek, Theodore F. Thu .
"Substrate for thin silicon solar cells". United States. https://www.osti.gov/servlets/purl/871736.
@article{osti_871736,
title = {Substrate for thin silicon solar cells},
author = {Ciszek, Theodore F},
abstractNote = {A substrate for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3.times.10.sup.-3 ohm-cm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1998},
month = {Thu Jan 01 00:00:00 EST 1998}
}
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