Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

Title: Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

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Abstract

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Inventors:

Carlson, David E ^[1]

Yardley, PA

Issue Date:: 1980-01-01

Research Org.:: RCA Labs., Princeton, NJ (USA)

OSTI Identifier:: 863565

Patent Number(s):: 4200473

Assignee:: RCA Corporation (New York, NY)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/076 - Multiple junction or tandem solar cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/548 - Amorphous silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/062 - the potential barriers being only of the metal-insulator-semiconductor type

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DOE Contract Number:: EY-76-C-03-1286

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: amorphous; silicon; schottky; barrier; solar; cells; incorporating; insulating; layer; doped; incorporate; adjacent; junction; forming; metal; exhibit; increased; circuit; voltages; compared; standard; rectifying; devices; mis; silicon device; forming metal; barrier solar; circuit voltage; schottky barrier; metal layer; amorphous silicon; solar cell; solar cells; insulating layer; silicon devices; doped layer; rectifying junction; exhibit increased; layer adjacent; silicon schottky; cells incorporating; junction forming; /136/257/427/438/

Citation Formats


                    Carlson, David E. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer.  United States: N. p., 1980. 
        Web.

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                    Carlson, David E. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer.  United States.

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                    Carlson, David E. Tue .  
        "Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer".  United States.  https://www.osti.gov/servlets/purl/863565.

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@article{osti_863565,

  title        = {Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer},

  author       = {Carlson, David E},

  abstractNote = {Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1980},

  month        = {1}

}

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