Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
Abstract
Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.
- Inventors:
-
- Yardley, PA
- Issue Date:
- Research Org.:
- RCA Labs., Princeton, NJ (USA)
- OSTI Identifier:
- 863565
- Patent Number(s):
- 4200473
- Assignee:
- RCA Corporation (New York, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EY-76-C-03-1286
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- amorphous; silicon; schottky; barrier; solar; cells; incorporating; insulating; layer; doped; incorporate; adjacent; junction; forming; metal; exhibit; increased; circuit; voltages; compared; standard; rectifying; devices; mis; silicon device; forming metal; barrier solar; circuit voltage; schottky barrier; metal layer; amorphous silicon; solar cell; solar cells; insulating layer; silicon devices; doped layer; rectifying junction; exhibit increased; layer adjacent; silicon schottky; cells incorporating; junction forming; /136/257/427/438/
Citation Formats
Carlson, David E. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer. United States: N. p., 1980.
Web.
Carlson, David E. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer. United States.
Carlson, David E. Tue .
"Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer". United States. https://www.osti.gov/servlets/purl/863565.
@article{osti_863565,
title = {Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer},
author = {Carlson, David E},
abstractNote = {Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {1}
}
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