Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

Title: Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

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Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Inventors:

Carlson, David E. ^[1]

(Yardley, PA)

Issue Date:: 1980-01-01

OSTI Identifier:: 863565

Assignee:: RCA Corporation (New York, NY) OSTI

Patent Number(s):: US 4200473

Contract Number:: EY-76-C-03-1286

Research Org:: RCA Labs., Princeton, NJ (USA)

Country of Publication:: United States

Language:: English

Subject:: amorphous; silicon; schottky; barrier; solar; cells; incorporating; insulating; layer; doped; incorporate; adjacent; junction; forming; metal; exhibit; increased; circuit; voltages; compared; standard; rectifying; devices; mis; silicon device; forming metal; barrier solar; circuit voltage; schottky barrier; metal layer; amorphous silicon; solar cell; solar cells; insulating layer; silicon devices; doped layer; rectifying junction; exhibit increased; layer adjacent; silicon schottky; cells incorporating; junction forming; /136/257/427/438/

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