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Title: Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.
  1. (Yardley, PA)
Issue Date:
OSTI Identifier:
RCA Corporation (New York, NY) OSTI
Patent Number(s):
US 4200473
Contract Number:
Research Org:
RCA Labs., Princeton, NJ (USA)
Country of Publication:
United States
amorphous; silicon; schottky; barrier; solar; cells; incorporating; insulating; layer; doped; incorporate; adjacent; junction; forming; metal; exhibit; increased; circuit; voltages; compared; standard; rectifying; devices; mis; silicon device; forming metal; barrier solar; circuit voltage; schottky barrier; metal layer; amorphous silicon; solar cell; solar cells; insulating layer; silicon devices; doped layer; rectifying junction; exhibit increased; layer adjacent; silicon schottky; cells incorporating; junction forming; /136/257/427/438/