Broad beam ion implanter
Patent
·
OSTI ID:870632
- Hercules, CA
An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
- DOE Contract Number:
- AC03-76SF00098
- Assignee:
- Regents, University of California (Oakland, CA)
- Patent Number(s):
- US 5563418
- OSTI ID:
- 870632
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/250/
acceleration
anode
aperture
beam
broad
characterized
comprises
connecting
conversion
creating
described
device
device comprises
diameter
divergence-limiting
diverging
electrode
electrodes
essentially
essentially parallel
exit
exit aperture
extraction
extraction electrode
homogeneous
implantation
implanter
means
method
optics
parallel
plasma
source
supply
voltage
voltage supply
acceleration
anode
aperture
beam
broad
characterized
comprises
connecting
conversion
creating
described
device
device comprises
diameter
divergence-limiting
diverging
electrode
electrodes
essentially
essentially parallel
exit
exit aperture
extraction
extraction electrode
homogeneous
implantation
implanter
means
method
optics
parallel
plasma
source
supply
voltage
voltage supply