Broad beam ion implanter

Patent · Mon Jan 01 00:00:00 EST 1996

OSTI ID:870632

Leung, Ka-Ngo ^[1]

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1. Hercules, CA

An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098
• Assignee: Regents, University of California (Oakland, CA)
• Patent Number(s): US 5563418
• OSTI ID: 870632
• Country of Publication: United States
• Language: English

Related Subjects

broad
beam
implanter
implantation
device
creating
diameter
homogeneous
described
method
characterized
extraction
diverging
conversion
optics
essentially
parallel
comprises
plasma
source
anode
exit
aperture
electrode
divergence-limiting
acceleration
means
connecting
voltage
supply
electrodes
voltage supply
device comprises
exit aperture
extraction electrode
essentially parallel
/250/