Broad beam ion implanter
Patent
·
OSTI ID:379942
An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.
- Research Organization:
- University of California
- DOE Contract Number:
- AC03-76SF00098
- Assignee:
- Univ. of California, Oakland, CA (United States)
- Patent Number(s):
- US 5,563,418/A/
- Application Number:
- PAN: 8-362,074
- OSTI ID:
- 379942
- Country of Publication:
- United States
- Language:
- English
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