Pulsed energy synthesis and doping of silicon carbide
Abstract
A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.
- Inventors:
-
- San Rafael, CA
- Pleasanton, CA
- Brentwood, CA
- Beaverton, OR
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 869934
- Patent Number(s):
- 5425860
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- pulsed; energy; synthesis; doping; silicon; carbide; method; producing; beta; films; co-depositing; amorphous; carbon; substrate; whereafter; irradiated; exposure; source; excimer; laser; formation; beta-sic; compound; doped; produced; introducing; dopant; gases; irradiation; single; layers; thickness; 5-1; micron; thicker; multiple; processing; steps; electron; transport; properties; wide; temperature; range; 27; degree; -730; alpha; application; semiconductors; including; hetero-junction; bipolar; transistors; power; devices; bandgap; solar; arrays; ultra-hard; coatings; light; emitting; diodes; sensors; etc; pulsed energy; emitting diodes; emitting diode; single layer; temperature range; amorphous silicon; silicon carbide; energy source; processing steps; light emitting; electron transport; beta silicon; excimer laser; wide temperature; transport properties; processing step; power devices; producing beta; hard coatings; hard coating; bipolar transistors; bipolar transistor; solar array; introducing dopant; temperature semiconductor; temperature semiconductors; dopant gas; /204/136/
Citation Formats
Truher, Joel B, Kaschmitter, James L, Thompson, Jesse B, and Sigmon, Thomas W. Pulsed energy synthesis and doping of silicon carbide. United States: N. p., 1995.
Web.
Truher, Joel B, Kaschmitter, James L, Thompson, Jesse B, & Sigmon, Thomas W. Pulsed energy synthesis and doping of silicon carbide. United States.
Truher, Joel B, Kaschmitter, James L, Thompson, Jesse B, and Sigmon, Thomas W. Sun .
"Pulsed energy synthesis and doping of silicon carbide". United States. https://www.osti.gov/servlets/purl/869934.
@article{osti_869934,
title = {Pulsed energy synthesis and doping of silicon carbide},
author = {Truher, Joel B and Kaschmitter, James L and Thompson, Jesse B and Sigmon, Thomas W},
abstractNote = {A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1995},
month = {Sun Jan 01 00:00:00 EST 1995}
}
Works referenced in this record:
beta -SiC/Si heterojunction bipolar transistors with high current gain
journal, February 1988
- Sugii, T.; Ito, T.; Furumura, Y.
- IEEE Electron Device Letters, Vol. 9, Issue 2