Global to push GA events into
skip to main content

Title: Pulsed energy synthesis and doping of silicon carbide

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
87737
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 360601; PA: EDB-95:118721; SN: 95001431122
Patent Number(s):
US 5,425,860/A/
Application Number:
PAN: 8-043,820
Contract Number:
W-7405-ENG-48
Resource Relation:
Other Information: PBD: 20 Jun 1995
Research Org:
University of California
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON CARBIDES; CRYSTAL DOPING; FABRICATION; LASER RADIATION; USES; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR DEVICES; SOLAR CELL ARRAYS

Similar records in DOepatents and OSTI.GOV collections: