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Title: Pulsed energy synthesis and doping of silicon carbide

Abstract

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Inventors:
; ; ;
Issue Date:
Research Org.:
University of California
OSTI Identifier:
87737
Patent Number(s):
5,425,860
Application Number:
PAN: 8-043,820
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 20 Jun 1995
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON CARBIDES; CRYSTAL DOPING; FABRICATION; LASER RADIATION; USES; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR DEVICES; SOLAR CELL ARRAYS

Citation Formats

Truher, J B, Kaschmitter, J L, Thompson, J B, and Sigmon, T W. Pulsed energy synthesis and doping of silicon carbide. United States: N. p., 1995. Web.
Truher, J B, Kaschmitter, J L, Thompson, J B, & Sigmon, T W. Pulsed energy synthesis and doping of silicon carbide. United States.
Truher, J B, Kaschmitter, J L, Thompson, J B, and Sigmon, T W. Tue . "Pulsed energy synthesis and doping of silicon carbide". United States.
@article{osti_87737,
title = {Pulsed energy synthesis and doping of silicon carbide},
author = {Truher, J B and Kaschmitter, J L and Thompson, J B and Sigmon, T W},
abstractNote = {A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {6}
}