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Title: Diffusion bonding of silicon carbide using iridium and hermetic silicon carbide-iridium bonds

Abstract

An exemplary method of bonding of silicon carbide and objects having a hermetic silicon carbide-iridium-silicon carbide bond. The method includes the steps of inserting an iridium foil between two SiC layers; heating the iridium foil and SiC layers at a temperature of 1500 C in a vacuum of <10−5 ton; applying a pressure between 1 ksi and 7 ksi to the iridium foil and SiC layers; maintaining the temperature and pressure for 6-10 hours; and forming a hermetic seal having a leak rate <3×10−9 cm3/sec between the iridium foil and the two SiC layers. The SiC-iridium bonds lack cracks and are hermetic.

Inventors:
Issue Date:
Research Org.:
Bettis Atomic Power Lab. (BAPL), West Mifflin, PA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1576325
Patent Number(s):
10406774
Application Number:
15/417,293
Assignee:
U.S. Department of Energy (Washington, DC)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B32 - LAYERED PRODUCTS B32B - LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
B - PERFORMING OPERATIONS B23 - MACHINE TOOLS B23K - SOLDERING OR UNSOLDERING
DOE Contract Number:  
AC11-98PN38206
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Jan 27
Country of Publication:
United States
Language:
English

Citation Formats

Cockeram, Brian V. Diffusion bonding of silicon carbide using iridium and hermetic silicon carbide-iridium bonds. United States: N. p., 2019. Web.
Cockeram, Brian V. Diffusion bonding of silicon carbide using iridium and hermetic silicon carbide-iridium bonds. United States.
Cockeram, Brian V. Tue . "Diffusion bonding of silicon carbide using iridium and hermetic silicon carbide-iridium bonds". United States. https://www.osti.gov/servlets/purl/1576325.
@article{osti_1576325,
title = {Diffusion bonding of silicon carbide using iridium and hermetic silicon carbide-iridium bonds},
author = {Cockeram, Brian V.},
abstractNote = {An exemplary method of bonding of silicon carbide and objects having a hermetic silicon carbide-iridium-silicon carbide bond. The method includes the steps of inserting an iridium foil between two SiC layers; heating the iridium foil and SiC layers at a temperature of 1500 C in a vacuum of <10−5 ton; applying a pressure between 1 ksi and 7 ksi to the iridium foil and SiC layers; maintaining the temperature and pressure for 6-10 hours; and forming a hermetic seal having a leak rate <3×10−9 cm3/sec between the iridium foil and the two SiC layers. The SiC-iridium bonds lack cracks and are hermetic.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {9}
}

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