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Title: Diffusion bonding of silicon carbide using iridium and hermetic silicon carbide-iridium bonds

Patent ·
OSTI ID:1576325

An exemplary method of bonding of silicon carbide and objects having a hermetic silicon carbide-iridium-silicon carbide bond. The method includes the steps of inserting an iridium foil between two SiC layers; heating the iridium foil and SiC layers at a temperature of 1500 C in a vacuum of <10−5 ton; applying a pressure between 1 ksi and 7 ksi to the iridium foil and SiC layers; maintaining the temperature and pressure for 6-10 hours; and forming a hermetic seal having a leak rate <3×10−9 cm3/sec between the iridium foil and the two SiC layers. The SiC-iridium bonds lack cracks and are hermetic.

Research Organization:
Bettis Atomic Power Laboratory (BAPL), West Mifflin, PA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC11-98PN38206
Assignee:
U.S. Department of Energy (Washington, DC)
Patent Number(s):
10,406,774
Application Number:
15/417,293
OSTI ID:
1576325
Resource Relation:
Patent File Date: 2017 Jan 27
Country of Publication:
United States
Language:
English

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