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Title: Mixed ternary heterojunction solar cell

Abstract

A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.

Inventors:
 [1];  [1]
  1. (Seattle, WA)
Issue Date:
OSTI Identifier:
868437
Patent Number(s):
5141564
Application Number:
07/644,069
Assignee:
Boeing Company (Seattle, WA) OSTI
DOE Contract Number:  
ZL-4-040680-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
mixed; ternary; heterojunction; solar; cell; film; method; p-type; layer; i-iii-vi; semiconductor; material; contact; n-type; binary; ii-vi; resistivity; copper-rich; region; adjacent; metal; composition; gradient; providing; minority; carrier; mirror; improves; photovoltaic; performance; preferably; cuingase; cuin; metal contact; p-type layer; heterojunction solar; solar cell; semiconductor material; minority carrier; material preferably; p-type semiconductor; ii-vi semiconductor; n-type layer; region adjacent; junction solar; film heterojunction; mixed ternary; type semiconductor; /136/148/257/438/

Citation Formats

Chen, Wen S., and Stewart, John M. Mixed ternary heterojunction solar cell. United States: N. p., 1992. Web.
Chen, Wen S., & Stewart, John M. Mixed ternary heterojunction solar cell. United States.
Chen, Wen S., and Stewart, John M. Tue . "Mixed ternary heterojunction solar cell". United States. https://www.osti.gov/servlets/purl/868437.
@article{osti_868437,
title = {Mixed ternary heterojunction solar cell},
author = {Chen, Wen S. and Stewart, John M.},
abstractNote = {A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {8}
}

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