Mixed ternary heterojunction solar cell
Abstract
A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.
- Inventors:
-
- Seattle, WA
- Issue Date:
- OSTI Identifier:
- 868437
- Patent Number(s):
- 5141564
- Application Number:
- 07/644,069
- Assignee:
- Boeing Company (Seattle, WA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- ZL-4-040680-1
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- mixed; ternary; heterojunction; solar; cell; film; method; p-type; layer; i-iii-vi; semiconductor; material; contact; n-type; binary; ii-vi; resistivity; copper-rich; region; adjacent; metal; composition; gradient; providing; minority; carrier; mirror; improves; photovoltaic; performance; preferably; cuingase; cuin; metal contact; p-type layer; heterojunction solar; solar cell; semiconductor material; minority carrier; material preferably; p-type semiconductor; ii-vi semiconductor; n-type layer; region adjacent; junction solar; film heterojunction; mixed ternary; type semiconductor; /136/148/257/438/
Citation Formats
Chen, Wen S, and Stewart, John M. Mixed ternary heterojunction solar cell. United States: N. p., 1992.
Web.
Chen, Wen S, & Stewart, John M. Mixed ternary heterojunction solar cell. United States.
Chen, Wen S, and Stewart, John M. Wed .
"Mixed ternary heterojunction solar cell". United States. https://www.osti.gov/servlets/purl/868437.
@article{osti_868437,
title = {Mixed ternary heterojunction solar cell},
author = {Chen, Wen S and Stewart, John M},
abstractNote = {A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}
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