Mixed ternary heterojunction solar cell

Title: Mixed ternary heterojunction solar cell

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Abstract

A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.

Inventors:

Chen, Wen S ^[1]; Stewart, John M ^[1]

Seattle, WA

Issue Date:: 1992-08-25

OSTI Identifier:: 868437

Patent Number(s):: 5141564

Application Number:: 07/644,069

Assignee:: Boeing Company (Seattle, WA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/03928 - {including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils}
H01L31/1876 - {Particular processes or apparatus for batch treatment of the devices}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/541 - CuInSe2 material PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/03925 - {including AIIBVI compound materials, e.g. CdTe, CdS}
H01L31/0749 - including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/93 - Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V

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DOE Contract Number:: ZL-4-040680-1

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: mixed; ternary; heterojunction; solar; cell; film; method; p-type; layer; i-iii-vi; semiconductor; material; contact; n-type; binary; ii-vi; resistivity; copper-rich; region; adjacent; metal; composition; gradient; providing; minority; carrier; mirror; improves; photovoltaic; performance; preferably; cuingase; cuin; metal contact; p-type layer; heterojunction solar; solar cell; semiconductor material; minority carrier; material preferably; p-type semiconductor; ii-vi semiconductor; n-type layer; region adjacent; junction solar; film heterojunction; mixed ternary; type semiconductor; /136/148/257/438/

Citation Formats


                    Chen, Wen S, and Stewart, John M. Mixed ternary heterojunction solar cell.  United States: N. p., 1992. 
        Web.

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                    Chen, Wen S, & Stewart, John M. Mixed ternary heterojunction solar cell.  United States.

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                    Chen, Wen S, and Stewart, John M. Tue .  
        "Mixed ternary heterojunction solar cell".  United States.  https://www.osti.gov/servlets/purl/868437.

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@article{osti_868437,

  title        = {Mixed ternary heterojunction solar cell},

  author       = {Chen, Wen S and Stewart, John M},

  abstractNote = {A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1992},

  month        = {8}

}

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