p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells
Abstract
The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.
- Inventors:
- Issue Date:
- Research Org.:
- Northwestern Univ., Evanston, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1164344
- Patent Number(s):
- 8895848
- Application Number:
- 12/191,407
- Assignee:
- Northwestern University (Evanston, IL)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C08 - ORGANIC MACROMOLECULAR COMPOUNDS C08G - MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- DOE Contract Number:
- FG02-06ER46320
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2008 Aug 14
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE
Citation Formats
Irwin, Michael D., Buchholz, Donald B., Marks, Tobin J., and Chang, Robert P. H. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells. United States: N. p., 2014.
Web.
Irwin, Michael D., Buchholz, Donald B., Marks, Tobin J., & Chang, Robert P. H. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells. United States.
Irwin, Michael D., Buchholz, Donald B., Marks, Tobin J., and Chang, Robert P. H. Tue .
"p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells". United States. https://www.osti.gov/servlets/purl/1164344.
@article{osti_1164344,
title = {p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells},
author = {Irwin, Michael D. and Buchholz, Donald B. and Marks, Tobin J. and Chang, Robert P. H.},
abstractNote = {The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {11}
}
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