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Title: p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1164344
Assignee:
Northwestern University (Evanston, IL) CHO
Patent Number(s):
8,895,848
Application Number:
12/191,407
Contract Number:
FG02-06ER46320
Research Org:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Other works cited in this record:

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High-Efficiency and Stable Mesoscopic Dye-Sensitized Solar Cells Based on a High Molar Extinction Coefficient Ruthenium Sensitizer and Nonvolatile Electrolyte
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Semiconductor and electrochromic properties of electrochemically deposited nickel oxide films
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High-efficiency solution processable polymer photovoltaic cells by self-organization of polymer blends
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The electronic structure of NiO investigated by photoemission spectroscopy
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UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO
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Fabrication of nickel oxide and Ni-doped indium tin oxide thin films using pyrosol process
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Performance and stability of electroluminescent device with self-assembled layers of poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonate) and polyelectrolytes
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Highly efficient organic light-emitting diodes fabricated utilizing nickel-oxide buffer layers between the anodes and the hole transport layers
journal, April 2007

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