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Title: p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.
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OSTI Identifier:
Northwestern University (Evanston, IL) CHO
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Research Org:
Northwestern Univ., Evanston, IL (United States)
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Country of Publication:
United States

Works referenced in this record:

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