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Title: p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

Abstract

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

Inventors:
; ; ;
Issue Date:
Research Org.:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1164344
Patent Number(s):
8,895,848
Application Number:
12/191,407
Assignee:
Northwestern University (Evanston, IL)
DOE Contract Number:  
FG02-06ER46320
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats

Irwin, Michael D, Buchholz, Donald B, Marks, Tobin J, and Chang, Robert P. H. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells. United States: N. p., 2014. Web.
Irwin, Michael D, Buchholz, Donald B, Marks, Tobin J, & Chang, Robert P. H. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells. United States.
Irwin, Michael D, Buchholz, Donald B, Marks, Tobin J, and Chang, Robert P. H. Tue . "p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells". United States. https://www.osti.gov/servlets/purl/1164344.
@article{osti_1164344,
title = {p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells},
author = {Irwin, Michael D and Buchholz, Donald B and Marks, Tobin J and Chang, Robert P. H.},
abstractNote = {The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {11}
}

Patent:

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