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Title: Method for forming indium oxide/n-silicon heterojunction solar cells

Abstract

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Inventors:
 [1];  [2]
  1. Morris Plains, NJ
  2. New Providence, NJ
Issue Date:
Research Org.:
Exxon Research and Engineering Company
OSTI Identifier:
864914
Patent Number(s):
4436765
Application Number:
06/422,668
Assignee:
Exxon Research and Engineering Co. (Florham Park, NJ)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
XJ-0-9077-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; forming; indium; oxide; n-silicon; heterojunction; solar; cells; photo-conversion; efficiency; cell; spray; deposited; solution; containing; trichloride; exhibits; air; mass; conversion; excess; 10; n-silicon heterojunction; air mass; heterojunction solar; indium oxide; conversion efficiency; solution containing; solar cell; solar cells; junction solar; spray deposited; cell exhibits; solar conversion; indium trichloride; photo-conversion efficiency; efficiency indium; containing indium; /438/136/427/

Citation Formats

Feng, Tom, and Ghosh, Amal K. Method for forming indium oxide/n-silicon heterojunction solar cells. United States: N. p., 1984. Web.
Feng, Tom, & Ghosh, Amal K. Method for forming indium oxide/n-silicon heterojunction solar cells. United States.
Feng, Tom, and Ghosh, Amal K. Tue . "Method for forming indium oxide/n-silicon heterojunction solar cells". United States. https://www.osti.gov/servlets/purl/864914.
@article{osti_864914,
title = {Method for forming indium oxide/n-silicon heterojunction solar cells},
author = {Feng, Tom and Ghosh, Amal K},
abstractNote = {A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {3}
}

Patent: