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Title: InGaAsN/GaAs heterojunction for multi-junction solar cells

Abstract

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

Inventors:
 [1];  [1];  [1];  [2]
  1. Albuquerque, NM
  2. Edgewood, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
873812
Patent Number(s):
6252287
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
ingaasn; gaas; heterojunction; multi-junction; solar; cells; semiconductor; p-n; disclosed; forming; 95-1; bandgap; photodetector; application; high-efficiency; formed; epitaxially; growing; gallium; arsenide; germanium; substrate; n-type; indium; nitride; layer; alloy; composition; 1-x; 1-y; ltoreq; 04; p-type; layers; lattice-matched; grown; molecular; beam; epitaxy; metalorganic; chemical; vapor; deposition; mocvd; provides; open-circuit; voltage; 62; volts; internal; quantum; efficiency; 70; indium gallium; alloy composition; circuit voltage; chemical vapor; solar cell; solar cells; vapor deposition; molecular beam; semiconductor alloy; quantum efficiency; gallium arsenide; beam epitaxy; gaas layer; multi-junction solar; metalorganic chemical; junction solar; epitaxially grown; organic chemical; epitaxially growing; /257/136/

Citation Formats

Kurtz, Steven R, Allerman, Andrew A, Klem, John F, and Jones, Eric D. InGaAsN/GaAs heterojunction for multi-junction solar cells. United States: N. p., 2001. Web.
Kurtz, Steven R, Allerman, Andrew A, Klem, John F, & Jones, Eric D. InGaAsN/GaAs heterojunction for multi-junction solar cells. United States.
Kurtz, Steven R, Allerman, Andrew A, Klem, John F, and Jones, Eric D. Mon . "InGaAsN/GaAs heterojunction for multi-junction solar cells". United States. https://www.osti.gov/servlets/purl/873812.
@article{osti_873812,
title = {InGaAsN/GaAs heterojunction for multi-junction solar cells},
author = {Kurtz, Steven R and Allerman, Andrew A and Klem, John F and Jones, Eric D},
abstractNote = {An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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Works referenced in this record:

InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
journal, February 1999


GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
journal, February 1996


A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers
journal, November 1997


GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
journal, May 1998


Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition
journal, May 1997


Raman studies of nitrogen incorporation in GaAs1−xNx
journal, September 1998


GaInNAs: a novel material for long-wavelength semiconductor lasers
journal, June 1997


Metalorganic chemical vapor deposition of GaInNAs lattice matched to GaAs for long-wavelength laser diodes
journal, September 1998


GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy
journal, January 1998


Experimental results of GaInP/sub 2//GaAs/Ge triple junction cell development for space power systems
conference, January 1996


29.5%‐efficient GaInP/GaAs tandem solar cells
journal, August 1994


Projected performance of three- and four-junction devices using GaAs and GaInP
conference, January 1997