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Title: InGaAsN/GaAs heterojunction for multi-junction solar cells

Abstract

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

Inventors:
 [1];  [1];  [1];  [2]
  1. (Albuquerque, NM)
  2. (Edgewood, NM)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
873812
Patent Number(s):
6252287
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
ingaasn; gaas; heterojunction; multi-junction; solar; cells; semiconductor; p-n; disclosed; forming; 95-1; bandgap; photodetector; application; high-efficiency; formed; epitaxially; growing; gallium; arsenide; germanium; substrate; n-type; indium; nitride; layer; alloy; composition; 1-x; 1-y; ltoreq; 04; p-type; layers; lattice-matched; grown; molecular; beam; epitaxy; metalorganic; chemical; vapor; deposition; mocvd; provides; open-circuit; voltage; 62; volts; internal; quantum; efficiency; 70; indium gallium; alloy composition; circuit voltage; chemical vapor; solar cell; solar cells; vapor deposition; molecular beam; semiconductor alloy; quantum efficiency; gallium arsenide; beam epitaxy; gaas layer; multi-junction solar; metalorganic chemical; junction solar; epitaxially grown; organic chemical; epitaxially growing; /257/136/

Citation Formats

Kurtz, Steven R., Allerman, Andrew A., Klem, John F., and Jones, Eric D. InGaAsN/GaAs heterojunction for multi-junction solar cells. United States: N. p., 2001. Web.
Kurtz, Steven R., Allerman, Andrew A., Klem, John F., & Jones, Eric D. InGaAsN/GaAs heterojunction for multi-junction solar cells. United States.
Kurtz, Steven R., Allerman, Andrew A., Klem, John F., and Jones, Eric D. Mon . "InGaAsN/GaAs heterojunction for multi-junction solar cells". United States. https://www.osti.gov/servlets/purl/873812.
@article{osti_873812,
title = {InGaAsN/GaAs heterojunction for multi-junction solar cells},
author = {Kurtz, Steven R. and Allerman, Andrew A. and Klem, John F. and Jones, Eric D.},
abstractNote = {An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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