InGaAsN/GaAs heterojunction for multi-junction solar cells
Abstract
An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.
- Inventors:
-
- Albuquerque, NM
- Edgewood, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873812
- Patent Number(s):
- 6252287
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- ingaasn; gaas; heterojunction; multi-junction; solar; cells; semiconductor; p-n; disclosed; forming; 95-1; bandgap; photodetector; application; high-efficiency; formed; epitaxially; growing; gallium; arsenide; germanium; substrate; n-type; indium; nitride; layer; alloy; composition; 1-x; 1-y; ltoreq; 04; p-type; layers; lattice-matched; grown; molecular; beam; epitaxy; metalorganic; chemical; vapor; deposition; mocvd; provides; open-circuit; voltage; 62; volts; internal; quantum; efficiency; 70; indium gallium; alloy composition; circuit voltage; chemical vapor; solar cell; solar cells; vapor deposition; molecular beam; semiconductor alloy; quantum efficiency; gallium arsenide; beam epitaxy; gaas layer; multi-junction solar; metalorganic chemical; junction solar; epitaxially grown; organic chemical; epitaxially growing; /257/136/
Citation Formats
Kurtz, Steven R, Allerman, Andrew A, Klem, John F, and Jones, Eric D. InGaAsN/GaAs heterojunction for multi-junction solar cells. United States: N. p., 2001.
Web.
Kurtz, Steven R, Allerman, Andrew A, Klem, John F, & Jones, Eric D. InGaAsN/GaAs heterojunction for multi-junction solar cells. United States.
Kurtz, Steven R, Allerman, Andrew A, Klem, John F, and Jones, Eric D. Mon .
"InGaAsN/GaAs heterojunction for multi-junction solar cells". United States. https://www.osti.gov/servlets/purl/873812.
@article{osti_873812,
title = {InGaAsN/GaAs heterojunction for multi-junction solar cells},
author = {Kurtz, Steven R and Allerman, Andrew A and Klem, John F and Jones, Eric D},
abstractNote = {An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}
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