Vacuum die attach for integrated circuits
Abstract
A thin film eutectic bond for attaching an integrated circuit die to a circuit substrate is formed by coating at least one bonding surface on the die and substrate with an alloying metal, assembling the die and substrate under compression loading, and heating the assembly to an alloying temperature in a vacuum. A very thin bond, 10 microns or less, which is substantially void free, is produced. These bonds have high reliability, good heat and electrical conduction, and high temperature tolerance. The bonds are formed in a vacuum chamber, using a positioning and loading fixture to compression load the die, and an IR lamp or other heat source. For bonding a silicon die to a silicon substrate, a gold silicon alloy bond is used. Multiple dies can be bonded simultaneously. No scrubbing is required.
- Inventors:
-
- Livermore, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 867973
- Patent Number(s):
- 5046656
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- vacuum; die; attach; integrated; circuits; film; eutectic; bond; attaching; circuit; substrate; formed; coating; bonding; surface; alloying; metal; assembling; compression; loading; heating; assembly; temperature; 10; microns; substantially; void; free; produced; bonds; reliability; heat; electrical; conduction; tolerance; chamber; positioning; fixture; load; lamp; source; silicon; gold; alloy; multiple; dies; bonded; simultaneously; scrubbing; required; loading fixture; vacuum chamber; heat source; silicon substrate; integrated circuits; integrated circuit; void free; substantially void; alloying metal; electrical conduction; compression load; silicon alloy; /228/257/
Citation Formats
Schmitt, Edward H, and Tuckerman, David B. Vacuum die attach for integrated circuits. United States: N. p., 1991.
Web.
Schmitt, Edward H, & Tuckerman, David B. Vacuum die attach for integrated circuits. United States.
Schmitt, Edward H, and Tuckerman, David B. Tue .
"Vacuum die attach for integrated circuits". United States. https://www.osti.gov/servlets/purl/867973.
@article{osti_867973,
title = {Vacuum die attach for integrated circuits},
author = {Schmitt, Edward H and Tuckerman, David B},
abstractNote = {A thin film eutectic bond for attaching an integrated circuit die to a circuit substrate is formed by coating at least one bonding surface on the die and substrate with an alloying metal, assembling the die and substrate under compression loading, and heating the assembly to an alloying temperature in a vacuum. A very thin bond, 10 microns or less, which is substantially void free, is produced. These bonds have high reliability, good heat and electrical conduction, and high temperature tolerance. The bonds are formed in a vacuum chamber, using a positioning and loading fixture to compression load the die, and an IR lamp or other heat source. For bonding a silicon die to a silicon substrate, a gold silicon alloy bond is used. Multiple dies can be bonded simultaneously. No scrubbing is required.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1991},
month = {Tue Jan 01 00:00:00 EST 1991}
}