Process for forming planarized films

Pang, Stella W; Horn, Mark W

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Title: Process for forming planarized films

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Abstract

A planarization process and apparatus which employs plasma-enhanced chemical vapor deposition (PECVD) to form plarnarization films of dielectric or conductive carbonaceous material on step-like substrates.

Inventors:

Pang, Stella W ^[1]; Horn, Mark W ^[2]

Arlington, MA
North Chelmsford, MA

Issue Date:: Tue Jan 01 00:00:00 EST 1991

Research Org.:: United States Air Force

OSTI Identifier:: 867826

Patent Number(s):: 5017403

Assignee:: Massachusetts Institute of Technology (Cambridge, MA)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/08 - from metal halides
C23C16/26 - Deposition of carbon only
C23C16/45565 - {Shower nozzles}
C23C16/5096 - {Flat-bed apparatus}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02164 - {the material being a silicon oxide, e.g. SiO2}
H01L21/0217 - {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
H01L21/02274 - {in the presence of a plasma [PECVD]}
H01L21/314 - Inorganic layers
H01L21/32051 - {Deposition of metallic or metal-silicide layers}
H01L21/76819 - {Smoothing of the dielectric
H01L21/7684 - {Smoothing

Show less

DOE Contract Number:: F19628-85-C-0002

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: process; forming; planarized; films; planarization; apparatus; employs; plasma-enhanced; chemical; vapor; deposition; pecvd; form; plarnarization; dielectric; conductive; carbonaceous; material; step-like; substrates; enhanced chemical; chemical vapor; carbonaceous material; vapor deposition; plasma-enhanced chemical; conductive carbon; /427/216/

Citation Formats


                    Pang, Stella W, and Horn, Mark W. Process for forming planarized films.  United States: N. p., 1991. 
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                    Pang, Stella W, & Horn, Mark W. Process for forming planarized films.  United States.

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                    Pang, Stella W, and Horn, Mark W. Tue .  
        "Process for forming planarized films".  United States.  https://www.osti.gov/servlets/purl/867826.

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@article{osti_867826,

  title        = {Process for forming planarized films},

  author       = {Pang, Stella W and Horn, Mark W},

  abstractNote = {A planarization process and apparatus which employs plasma-enhanced chemical vapor deposition (PECVD) to form plarnarization films of dielectric or conductive carbonaceous material on step-like substrates.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Jan 01 00:00:00 EST 1991},

  month        = {Tue Jan 01 00:00:00 EST 1991}

}

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