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Title: Process for forming planarized films

Abstract

A planarization process and apparatus which employs plasma-enhanced chemical vapor deposition (PECVD) to form plarnarization films of dielectric or conductive carbonaceous material on step-like substrates.

Inventors:
 [1];  [2]
  1. Arlington, MA
  2. North Chelmsford, MA
Issue Date:
Research Org.:
United States Air Force
OSTI Identifier:
867826
Patent Number(s):
5017403
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
DOE Contract Number:  
F19628-85-C-0002
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; forming; planarized; films; planarization; apparatus; employs; plasma-enhanced; chemical; vapor; deposition; pecvd; form; plarnarization; dielectric; conductive; carbonaceous; material; step-like; substrates; enhanced chemical; chemical vapor; carbonaceous material; vapor deposition; plasma-enhanced chemical; conductive carbon; /427/216/

Citation Formats

Pang, Stella W, and Horn, Mark W. Process for forming planarized films. United States: N. p., 1991. Web.
Pang, Stella W, & Horn, Mark W. Process for forming planarized films. United States.
Pang, Stella W, and Horn, Mark W. Tue . "Process for forming planarized films". United States. https://www.osti.gov/servlets/purl/867826.
@article{osti_867826,
title = {Process for forming planarized films},
author = {Pang, Stella W and Horn, Mark W},
abstractNote = {A planarization process and apparatus which employs plasma-enhanced chemical vapor deposition (PECVD) to form plarnarization films of dielectric or conductive carbonaceous material on step-like substrates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}

Patent:

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